Datasheet > IMT65R039M1H

IMT65R039M1H

更新时间： 2024-04-09 19:02:53

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
15页	1507K
描述
CoolSIC? MOSFET?650 V, 39 mΩ in TOLL package leverages the strengths of the Infineon SiC technolog

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IMT65R039M1H 数据手册

IMT65R039M1H

MOSFET

PG-HSOF-8

650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice

Theꢀ650ꢀVꢀCoolSiC™ꢀisꢀbuiltꢀoverꢀtheꢀsolidꢀsiliconꢀcarbideꢀtechnology

developedꢀinꢀInfineonꢀinꢀmoreꢀthanꢀ20ꢀyears.ꢀLeveragingꢀtheꢀwideꢀbandgap

SiCꢀmaterialꢀcharacteristics,ꢀtheꢀ650VꢀCoolSiC™ꢀMOSFETꢀoffersꢀaꢀunique

combinationꢀofꢀperformance,ꢀreliabilityꢀandꢀeaseꢀofꢀuse.ꢀSuitableꢀforꢀhigh

temperatureꢀandꢀharshꢀoperations,ꢀitꢀenablesꢀtheꢀsimplifiedꢀandꢀcost

effectiveꢀdeploymentꢀofꢀtheꢀhighestꢀsystemꢀefficiency.

Tab

Features

•ꢀOptimizedꢀswitchingꢀbehaviorꢀatꢀhigherꢀcurrents

•ꢀCommutationꢀrobustꢀfastꢀbodyꢀdiodeꢀwithꢀlowꢀQ_f

•ꢀSuperiorꢀgateꢀoxideꢀreliability

•ꢀT_j,max=175°Cꢀandꢀexcellentꢀthermalꢀbehavior

•ꢀLowerꢀR_DS(on)ꢀandꢀpulseꢀcurrentꢀdependencyꢀonꢀtemperature

•ꢀIncreasedꢀavalancheꢀcapability

Drain

Tab

•ꢀCompatibleꢀwithꢀstandardꢀdriversꢀ(recommendedꢀdrivingꢀvoltage:ꢀ0V-18V)

•ꢀKelvinꢀsourceꢀprovidesꢀupꢀtoꢀ4ꢀtimesꢀlowerꢀswitchingꢀlosses

Gate

Pin 1

Driver

Source

Pin 2

Source

Pin 3-8

Benefits

*1: Internal body diode

•ꢀUniqueꢀcombinationꢀofꢀhighꢀperformance,ꢀhighꢀreliabilityꢀandꢀeaseꢀofꢀuse

•ꢀEaseꢀofꢀuseꢀandꢀintegration

•ꢀSuitableꢀforꢀtopologiesꢀwithꢀcontinuousꢀhardꢀcommutation

•ꢀHigherꢀrobustnessꢀandꢀsystemꢀreliability

•ꢀEfficiencyꢀimprovement

•ꢀReducedꢀsystemꢀsizeꢀleadingꢀtoꢀhigherꢀpowerꢀdensity

Potentialꢀapplications

•ꢀSMPS

•ꢀUPSꢀ(uninterruptableꢀpowerꢀsupplies)

•ꢀSolarꢀPVꢀinverters

•ꢀEVꢀchargingꢀinfrastructure

•ꢀEnergyꢀstorageꢀandꢀbatteryꢀformation

•ꢀClassꢀDꢀamplifiers

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Pleaseꢀnote:ꢀTheꢀsourceꢀandꢀsenseꢀsourceꢀpinsꢀareꢀnotꢀexchangeable.

Theirꢀexchangeꢀmightꢀleadꢀtoꢀmalfunction.

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

V_DSꢀ@ꢀT_Jꢀ=ꢀ25ꢀ°C

R_DS(on),typ

Value

650

Unit

mΩ

R_DS(on),max

Q_G,typ

I_DM

122

Q_ossꢀ@ꢀ400ꢀV

E_ossꢀ@ꢀ400ꢀV

µJ

14.6

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

65R039M1

RelatedꢀLinks

IMT65R039M1H

PG-HSOF-8

see Appendix A

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2023-02-24

12 3 4 5 6 7...15

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IMT65R072M1H	INFINEON	CoolSIC? MOSFET?650 V, 72 mΩ in TOLL package	获取价格
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