Datasheet > IMT65R107M1H

IMT65R107M1H

更新时间： 2024-11-18 15:19:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
15页	1455K
描述
CoolSIC? MOSFET?650 V, 107 mΩ in TOLL package leverages the strengths of the Infineon SiC technolo

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中文翻译

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IMT65R107M1H 数据手册

IMT65R107M1H

MOSFET

PG-HSOF-8

650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice

Theꢀ650ꢀVꢀCoolSiC™ꢀisꢀbuiltꢀoverꢀtheꢀsolidꢀsiliconꢀcarbideꢀtechnology

developedꢀinꢀInfineonꢀinꢀmoreꢀthanꢀ20ꢀyears.ꢀLeveragingꢀtheꢀwideꢀbandgap

SiCꢀmaterialꢀcharacteristics,ꢀtheꢀ650VꢀCoolSiC™ꢀMOSFETꢀoffersꢀaꢀunique

combinationꢀofꢀperformance,ꢀreliabilityꢀandꢀeaseꢀofꢀuse.ꢀSuitableꢀforꢀhigh

temperatureꢀandꢀharshꢀoperations,ꢀitꢀenablesꢀtheꢀsimplifiedꢀandꢀcost

effectiveꢀdeploymentꢀofꢀtheꢀhighestꢀsystemꢀefficiency.

Tab

Features

•ꢀOptimizedꢀswitchingꢀbehaviorꢀatꢀhigherꢀcurrents

•ꢀCommutationꢀrobustꢀfastꢀbodyꢀdiodeꢀwithꢀlowꢀQ_f

•ꢀSuperiorꢀgateꢀoxideꢀreliability

•ꢀT_j,max=175°Cꢀandꢀexcellentꢀthermalꢀbehavior

•ꢀLowerꢀR_DS(on)ꢀandꢀpulseꢀcurrentꢀdependencyꢀonꢀtemperature

•ꢀIncreasedꢀavalancheꢀcapability

Drain

Tab

•ꢀCompatibleꢀwithꢀstandardꢀdriversꢀ(recommendedꢀdrivingꢀvoltage:ꢀ0V-18V)

•ꢀKelvinꢀsourceꢀprovidesꢀupꢀtoꢀ4ꢀtimesꢀlowerꢀswitchingꢀlosses

Gate

Pin 1

Driver

Source

Pin 2

Source

Pin 3-8

Benefits

*1: Internal body diode

•ꢀUniqueꢀcombinationꢀofꢀhighꢀperformance,ꢀhighꢀreliabilityꢀandꢀeaseꢀofꢀuse

•ꢀEaseꢀofꢀuseꢀandꢀintegration

•ꢀSuitableꢀforꢀtopologiesꢀwithꢀcontinuousꢀhardꢀcommutation

•ꢀHigherꢀrobustnessꢀandꢀsystemꢀreliability

•ꢀEfficiencyꢀimprovement

•ꢀReducedꢀsystemꢀsizeꢀleadingꢀtoꢀhigherꢀpowerꢀdensity

Potentialꢀapplications

•ꢀSMPS

•ꢀUPSꢀ(uninterruptableꢀpowerꢀsupplies)

•ꢀSolarꢀPVꢀinverters

•ꢀEVꢀchargingꢀinfrastructure

•ꢀEnergyꢀstorageꢀandꢀbatteryꢀformation

•ꢀClassꢀDꢀamplifiers

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Pleaseꢀnote:ꢀTheꢀsourceꢀandꢀsenseꢀsourceꢀpinsꢀareꢀnotꢀexchangeable.

Theirꢀexchangeꢀmightꢀleadꢀtoꢀmalfunction.

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

V_DSꢀ@ꢀT_Jꢀ=ꢀ25ꢀ°C

R_DS(on),typ

Value

650

107

141

Unit

mΩ

R_DS(on),max

Q_G,typ

I_DM

Q_ossꢀ@ꢀ400ꢀV

E_ossꢀ@ꢀ400ꢀV

µJ

5.3

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

65R107M1

RelatedꢀLinks

IMT65R107M1H

PG-HSOF-8

see Appendix A

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2023-03-08

12 3 4 5 6 7...15

中文翻译

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与IMT65R107M1H相关器件

型号	品牌	获取价格	描述	数据表
IMT65R163M1H	INFINEON	获取价格	CoolSIC? MOSFET?650 V, 163 mΩ in TOLL package
IMT65R260M1H	INFINEON	获取价格	CoolSIC? MOSFET?650 V, 260 mΩ in TOLL package
IMT-901	ETC	获取价格	Microstep Constant Current Driver “IC”
IMTI-65601L-25	TEMIC	获取价格	Standard SRAM, 1MX1, 25ns, CMOS, PDSO32,
IMTI-65601L-25:D	TEMIC	获取价格	Standard SRAM, 1MX1, 25ns, CMOS, PDSO32, 0.400 INCH, SOIC-32
IMTI-65601L-25:RD	TEMIC	获取价格	Standard SRAM, 1MX1, 25ns, CMOS, PDSO32,
IMTI-65601L-25SHXXX:R	TEMIC	获取价格	Standard SRAM, 1MX1, 25ns, CMOS, PDSO32,
IMTI-65601L-25SHXXX:RD	TEMIC	获取价格	Standard SRAM, 1MX1, 25ns, CMOS, PDSO32, 0.400 INCH, SOIC-32
IMTI-65601L-30:RD	TEMIC	获取价格	Standard SRAM, 1MX1, 30ns, CMOS, PDSO32,
IMTI-65601L-30SHXXX	TEMIC	获取价格	Standard SRAM, 1MX1, 30ns, CMOS, PDSO32,

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