Datasheet > IMT65R083M1H

IMT65R083M1H

更新时间： 2024-11-18 15:18:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
15页	1425K
描述
CoolSIC? MOSFET?650 V, 83 mΩ in TOLL package leverages the strengths of the Infineon SiC technolog

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中文翻译

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数据手册

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IMT65R083M1H 数据手册

IMT65R083M1H

MOSFET

PG-HSOF-8

650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice

Theꢀ650ꢀVꢀCoolSiC™ꢀisꢀbuiltꢀoverꢀtheꢀsolidꢀsiliconꢀcarbideꢀtechnology

developedꢀinꢀInfineonꢀinꢀmoreꢀthanꢀ20ꢀyears.ꢀLeveragingꢀtheꢀwideꢀbandgap

SiCꢀmaterialꢀcharacteristics,ꢀtheꢀ650VꢀCoolSiC™ꢀMOSFETꢀoffersꢀaꢀunique

combinationꢀofꢀperformance,ꢀreliabilityꢀandꢀeaseꢀofꢀuse.ꢀSuitableꢀforꢀhigh

temperatureꢀandꢀharshꢀoperations,ꢀitꢀenablesꢀtheꢀsimplifiedꢀandꢀcost

effectiveꢀdeploymentꢀofꢀtheꢀhighestꢀsystemꢀefficiency.

Tab

Features

•ꢀOptimizedꢀswitchingꢀbehaviorꢀatꢀhigherꢀcurrents

•ꢀCommutationꢀrobustꢀfastꢀbodyꢀdiodeꢀwithꢀlowꢀQ_f

•ꢀSuperiorꢀgateꢀoxideꢀreliability

•ꢀT_j,max=175°Cꢀandꢀexcellentꢀthermalꢀbehavior

•ꢀLowerꢀR_DS(on)ꢀandꢀpulseꢀcurrentꢀdependencyꢀonꢀtemperature

•ꢀIncreasedꢀavalancheꢀcapability

Drain

Tab

•ꢀCompatibleꢀwithꢀstandardꢀdriversꢀ(recommendedꢀdrivingꢀvoltage:ꢀ0V-18V)

•ꢀKelvinꢀsourceꢀprovidesꢀupꢀtoꢀ4ꢀtimesꢀlowerꢀswitchingꢀlosses

Gate

Pin 1

Driver

Source

Pin 2

Source

Pin 3-8

Benefits

*1: Internal body diode

•ꢀUniqueꢀcombinationꢀofꢀhighꢀperformance,ꢀhighꢀreliabilityꢀandꢀeaseꢀofꢀuse

•ꢀEaseꢀofꢀuseꢀandꢀintegration

•ꢀSuitableꢀforꢀtopologiesꢀwithꢀcontinuousꢀhardꢀcommutation

•ꢀHigherꢀrobustnessꢀandꢀsystemꢀreliability

•ꢀEfficiencyꢀimprovement

•ꢀReducedꢀsystemꢀsizeꢀleadingꢀtoꢀhigherꢀpowerꢀdensity

Potentialꢀapplications

•ꢀSMPS

•ꢀUPSꢀ(uninterruptableꢀpowerꢀsupplies)

•ꢀSolarꢀPVꢀinverters

•ꢀEVꢀchargingꢀinfrastructure

•ꢀEnergyꢀstorageꢀandꢀbatteryꢀformation

•ꢀClassꢀDꢀamplifiers

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Pleaseꢀnote:ꢀTheꢀsourceꢀandꢀsenseꢀsourceꢀpinsꢀareꢀnotꢀexchangeable.

Theirꢀexchangeꢀmightꢀleadꢀtoꢀmalfunction.

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

V_DSꢀ@ꢀT_Jꢀ=ꢀ25ꢀ°C

R_DS(on),typ

Value

650

Unit

mΩ

R_DS(on),max

Q_G,typ

111

I_DM

Q_ossꢀ@ꢀ400ꢀV

E_ossꢀ@ꢀ400ꢀV

µJ

6.6

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

65R083M1

RelatedꢀLinks

IMT65R083M1H

PG-HSOF-8

see Appendix A

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2023-03-08

12 3 4 5 6 7...15

中文翻译

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与IMT65R083M1H相关器件

型号	品牌	获取价格	描述	数据表
IMT65R107M1H	INFINEON	获取价格	CoolSIC? MOSFET?650 V, 107 mΩ in TOLL package
IMT65R163M1H	INFINEON	获取价格	CoolSIC? MOSFET?650 V, 163 mΩ in TOLL package
IMT65R260M1H	INFINEON	获取价格	CoolSIC? MOSFET?650 V, 260 mΩ in TOLL package
IMT-901	ETC	获取价格	Microstep Constant Current Driver “IC”
IMTI-65601L-25	TEMIC	获取价格	Standard SRAM, 1MX1, 25ns, CMOS, PDSO32,
IMTI-65601L-25:D	TEMIC	获取价格	Standard SRAM, 1MX1, 25ns, CMOS, PDSO32, 0.400 INCH, SOIC-32
IMTI-65601L-25:RD	TEMIC	获取价格	Standard SRAM, 1MX1, 25ns, CMOS, PDSO32,
IMTI-65601L-25SHXXX:R	TEMIC	获取价格	Standard SRAM, 1MX1, 25ns, CMOS, PDSO32,
IMTI-65601L-25SHXXX:RD	TEMIC	获取价格	Standard SRAM, 1MX1, 25ns, CMOS, PDSO32, 0.400 INCH, SOIC-32
IMTI-65601L-30:RD	TEMIC	获取价格	Standard SRAM, 1MX1, 30ns, CMOS, PDSO32,

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