Datasheet > IM802D-83EES-137.0000MHZ

IM802D-83EES-137.0000MHZ

更新时间： 2023-02-26 14:50:41

品牌	Logo	应用领域
ILSI		/
页数	文件大小	规格书
9页	773K
描述
LVCMOS Output Clock Oscillator, 137MHz Nom,

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数据手册

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MEMS Oscillator, Low Power, LVCMOS, 115.000 MHz to 137.000 MHz

IM802 Series

Performance Plots (Cont.)

Figure 7: RMS Integrated Phase Jitter Random

(12 kHz to 20 MHz vs Frequency)

Figure 8: RMS Integrated Phase Jitter Random

(900 kHz to 20 MHz vs Frequency

Notes:



All plots are measured with 15pF load at room temperature unless otherwise stated.

Phase noise plots are measured with Agilent E5052B signal source analyzer integration range is up to 5 MHz for carrier frequencies below 40 MHz

Environmental Specifications:

Environmental Compliance

Parameter

Condition/Test Method

Mechanical Shock

MIL-STD-883F, Method 2002

Mechanical Vibration

Temperature Cycle

Solderability

MIL-STD-883F, Method 2007

JESD22, Method A104

MIL-STD-883F, Method 2003

MSL Level 1 at +260ºC

Moisture Sensitivity Level

Pb Free Solder Reflow Profile

Ts max to T_L(Ramp-up Rate)

3ºC / second max

Preheat

Temperature min (Ts min)

Temperature typ (Ts typ)

Temperature max (Ts max)

Time (Ts)

150ºC

175ºC

200ºC

60 to180 seconds

Ramp-up Tate (T_Lto Tp

3ºC / second max

Time Maintained Above

Temperature (T_L)

Time (T_L)

217ºC

60 to 150 seconds

Peak Temperature (Tp)

260ºC max for seconds

Time within 5ºC to Peak

Temperature (Tp)

20 to 40 seconds

Ramp-down Rate

6ºC / second max

8 minute max

Level 1

Tune 25ºC to Peak Temperature

Moisture Sensitivity Level (MSL)

Units are backward compatible with +240ºC reflow processes

Rev: 08/18/17_B

Page 4 of 9

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Specifications subject to change without notice

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