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ILD32-X001 PDF预览

ILD32-X001

更新时间: 2024-11-28 21:13:39
品牌 Logo 应用领域
威世 - VISHAY 输出元件光电
页数 文件大小 规格书
2页 380K
描述
Darlington Output Optocoupler, 2-Element, 5300V Isolation, PLASTIC, DIP-8

ILD32-X001 技术参数

生命周期:Obsolete包装说明:PLASTIC, DIP-8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.40.80.00风险等级:5.82
Coll-Emtr Bkdn Voltage-Min:30 V配置:SEPARATE, 2 CHANNELS
标称电流传输比:500%最大暗电源:100 nA
最大正向电流:0.06 A最大绝缘电压:5300 V
元件数量:2最高工作温度:100 °C
最低工作温度:-55 °C光电设备类型:DARLINGTON OUTPUT OPTOCOUPLER
Base Number Matches:1

ILD32-X001 数据手册

 浏览型号ILD32-X001的Datasheet PDF文件第2页 
DUAL/QUADCHANNEL ILD32/ILQ32  
Photodarlington Optocoupler  
Dimensions in inches (mm)  
Dual Channel  
FEATURES  
pin one ID  
• Very High Current Transfer Ratio, 500% Min.  
• Isolation Test Voltage, 5300 V  
4
3
1
8
Anode  
2
1
2
8
7
Emitter  
RMS  
11  
.255 (6.48)  
.268 (6.81)  
• High Isolation Resistance, 10 Typical  
• Low Coupling Capacitance  
• Standard Plastic DIP Package  
• Underwriters Lab File #E52744  
VE  
Cathode  
Cathode  
Anode  
Collector  
Collector  
Emitter  
5
6
7
3
4
6
5
.379 (9.63)  
.390 (9.91)  
VDE 0884 Available with Option 1  
.030 (0.76)  
.045 (1.14)  
D
.300 (7.62)  
typ.  
.031 (0.79)  
4° typ.  
Maximum Ratings (Each Channel)  
Emitter  
.130 (3.30)  
.150 (3.81)  
.230(5.84)  
.250(6.35)  
Peak Reverse Voltage ...................................... 3.0 V  
Continuous Forward Current ..........................60 mA  
Power Dissipation at 25°C........................... 100 mW  
Derate Linearly from 25°C.....................1.33mW/°C  
Detector  
Collector-Emitter Breakdown Voltage ............... 30 V  
Collector (Load) Current...............................125 mA  
Power Dissipation at 25°C Ambient ............ 150 mW  
Derate Linearly from 25°C.......................2.0mW/°C  
Package  
.050 (1.27)  
10°  
.110 (2.79)  
.130 (3.30)  
.020 (.51 )  
.035 (.89 )  
3°9°  
.008 (.20)  
.012 (.30)  
.018 (.46)  
.022 (.56)  
.100 (2.54) typ.  
Quad Channel  
Anode  
Cathode  
Cathode  
Anode  
1
2
3
4
5
16 Emitter  
pin one ID  
15 Collector  
14  
Collector  
8
7
6
5
4
3
2
1
13  
Emitter  
.255 (6.48)  
.265 (6.81)  
12 Emitter  
Anode  
9
10 11 12 13 14 15 16  
6
7
11 Collector  
Cathode  
Cathode  
Anode  
10  
9
Collector  
Emitter  
Isolation Test Voltage (between emitter  
and detector refer to standard climate  
23°C/50%RH, DIN 50014)  
.779 (19.77 )  
.790 (20.07)  
8
.300 (7.62)  
typ.  
.030 (.76)  
.045 (1.14)  
.031(.79)  
t=1.0 sec..............................................5300 V  
RMS  
.130 (3.30)  
.150 (3.81)  
Creepage .................................................. 7.0 mm  
Clearance.................................................. 7.0 mm  
Comparative Tracking Index per  
.110 (2.79)  
.130 (3.30)  
.230 (5.84)  
.250 (6.35)  
10°  
typ.  
4°  
.020(.51)  
.035 (.89)  
3°9°  
.018 (.46)  
.022 (.56)  
.008 (.20)  
.012 (.30)  
DIN IEC 112/VDE303, part 1........................ 175  
.100 (2.54)typ.  
.050 (1.27)  
Isolation Resistance  
12  
V =500V, T =25°C ........................... R =10  
IO  
A
IO  
11  
Table 1. Electrical Characteristics, T =25°C  
Parameter  
A
V =500V, T =100°C ......................... R =10  
IO  
A
IO  
Symbol Min. Typ. Max. Unit Condition  
Total Dissipation at 25°C Ambient  
ILD32 ...................................................... 400 mW  
ILQ32 ...................................................... 500 mW  
Derate Linearly from 25°C  
ILD32 ................................................5.33mW/°C  
ILQ32 ................................................6.67mW/°C  
Storage Temperature ....................55°C to +150°C  
Operating Temperature ................55°C to +100°C  
Lead Soldering Time at 260°C..................... 10 sec.  
Emitter  
Forward Voltage  
Reverse Current  
Capacitance  
Detector  
VF  
IR  
1.25 1.5  
V
IF=10 mA  
VR=3.0 V  
VR=0 V  
0.1  
25  
100  
µA  
pF  
CO  
Breakdown Voltage  
Collector-Emitter  
BV  
BV  
30  
5.0  
V
IC=100 µA  
IF=0  
CEO  
ECO  
DESCRIPTION  
Breakdown Voltage  
Emitter-Collector  
10  
1.0  
V
I =100 µA  
E
The ILD32/ILQ32 are optically coupled isolators  
with a Gallium Arsenide infrared LED and a silicon  
photodarlington sensor. Switching can be achieved  
while maintaining a high degree of isolation  
between driving and load circuits. These optocou-  
plers can be used to replace reed and mercury  
relays with advantages of long life, high speed  
switching and elimination of magnetic fields.  
Collector-Emitter  
Leakage Current  
ICEO  
100  
nA  
VCE=10V  
IF=0  
Package  
Current Transfer Ratio CTR  
500  
%
V
IF=10 mA  
VCE=10V  
Collector Emitter  
Saturation Voltage  
VCEsat  
1.0  
IC=2.0 mA  
IF=8.0 mA  
The ILD32 has two isolated channels in a DIP pack-  
age, and the ILQ32 has four channels. These  
devices can be used to replace 4N32s or 4N33s in  
applications calling for several single channel  
optocouplers on a board.  
Isolation Capacitance CISOL  
0.5  
15  
30  
pF  
µs  
µs  
Turn-On Time  
Turn-Off Time  
VCC=10 V  
IF=5.0 mA  
RL=100 Ω  
t
on  
off  
t
Document Number: 83650  
Revision 17-August-01  
www.vishay.com  
2–179  

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