IL66B
PHOTODARLINGTON
OPTOCOUPLER
FEATURES
• Internal RBE for High Stability
• High Current Transfer Ratio
Dimensions in inches (mm)
2
1
6
3
pin one
ID.
Anode
Cathode
NC
1
2
3
6
5
4
NC
at I =2 mA, V =5 V
IL66B-1, 200% min.
IL66B-2, 750% min.
Withstand Test Voltage, 5300 VAC
F
CE
.248 (6.30)
.256 (6.50)
Collector
Emitter
•
RMS
4
5
• No Base Connection
.335 (8.50)
.343 (8.70)
•
•
High Isolation Resistance
Standard Plastic DIP Package
.039
(1.00)
min.
.300 (7.62)
typ.
• Underwriters Lab Approval #E52744
VE
•
VDE 0884 Available with Option 1
D
.130 (3.30)
.138 (3.50)
DESCRIPTION
18° typ.
4°
The IL66B is an optically coupled isolator employ-
ing a Gallium Arsenide infrared emitter and a silicon
photodarlington detector. Switching can be accom-
plished while maintaining a high degree of isolation
between driving and load circuits. They can be
used to replace reed and mercury relays with
advantages of long life, high speed switching and
elimination of magnetic fields.
.114 (2.90)
.130 (3.30)
typ.
.031 (0.80)
min.
.010 (.25) typ.
.031 (0.80)
.035 (0.90)
.018 (0.45)
.022 (0.55)
.300 (7.62)
.347 (8.82)
.100 (2.54) typ.
Electrical Characteristics (T =25°C)
A
Symbol
Min.
Typ.
Max.
Unit
Condition
Maximum Ratings (at 25°C)
Emitter
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
V
1.25
0.01
25
1.5
V
I =10 mA
F
F
Peak Reverse Voltage ........................................6 V
Continuous Forward Current .........................60 mA
Power Dissipation at 25°C..........................100 mW
Derate Linearly from 55°C ....................1.33 mW/°C
I
100
µA
pF
V =3.0 V
R
R
C
V =0 V
R
O
Detector
Collector-Emitter Breakdown Voltage .............. 60 V
Emitter-Collector Breakdown Voltage ................ 5 V
Power Dissipation at 25°C Ambient ...........200 mW
Derate Linearly from 25°C ......................2.6 mW/°C
Breakdown Voltage
Collector-Emitter
BV
60
V
I =100 µA,
C
CEO
I =0
F
Leakage Current
Collector-Emitter
I
1.0
100
nA
V =50 V,
CE
CEO
I =0
F
Package
Package
Isolation Test Voltage (t=1 sec.) ........ 5300 VAC
Isolation Resistance
RMS
Current Transfer Ratio
CTR
I =2 mA,
F
12
V =500 V, T =25°C ............................... ≥10
Ω
IO
A
V E=5 V
C
11
V =500 V, T =100°C ............................. ≥10
Ω
IL66B-1
IL66B-2
200
750
%
%
IO
A
1000
Total Dissipation at 25°C ............................250 mW
Derate Linearly from 25°C ......................3.3 mW/°C
Creepage Path ........................................ 7 min mm
Clearance Path........................................ 7 min mm
Storage Temperature ....................–55°C to +150°C
Operating Temperature ................–55°C to +100°C
Lead Soldering Time at 260°C .................... 10 sec.
Saturation Voltage
Collector-Emitter
V
1.0
V
I =10 mA,
C
CEsat
I =10 mA
F
Turn-On,Turn-Off
Time
t
,t
200
µs
V
=10 V
on off
CC
I =2 mA,
F
R =100 Ω
L
5–1
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