IL205AT/206AT/207AT/
208AT
PHOTOTRANSISTOR
SMALL OUTLINE
FEATURES
SURFACE MOUNT OPTOCOUPLER
• High Current Transfer Ratio, IF=10mA,
V
CE=5 V
Package Dimensions in Inches (mm)
IL205AT, 40 – 80%
IL206AT, 63 –125%
IL207AT, 100 – 200%
IL208AT, 160 – 320%
• High BVCEO, 70 V
• Isolation Voltage, 2500 VACRMS
• Industry Standard SOIC-8 Surface
Mountable Package
.120±.005
(3.05±.13)
.240
Anode
.154±.005 Cathode
8
7
6
5
1
2
3
4
NC
Base
Collector
Emitter
C
L
(3.91±.13)
NC
NC
(6.10)
.016 (.41)
Pin One ID
7°
.058±.005
(1.49±.13)
40°
.192±.005
(4.88±.13)
.015±.002
(.38±.05)
• Standard Lead Spacing, .05"
• Available in Tape and Reel (suffix T)
(Conforms to EIA Standard RS481A)
• Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
.004 (.10)
.008 (.20)
.125±.005
(3.18±.13)
.008 (.20)
5° max.
Lead
R.010
(.25) max.
.050 (1.27)
typ.
.021 (.53)
Coplanarity
±.0015 (.04)
max.
.020±.004
(.15±.10)
2 plcs.
• Underwriters Lab File #E52744
(Code Letter P)
TOLERANCE: ±.005 (unless otherwise noted)
DESCRIPTION
The IL205AT/206AT/207AT/208AT are optically
coupled pairs with a Gallium Arsenide infrared LED
and a silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the
device while maintaining a high degree of electrical
isolation between input and output. The IL205/6/7/8
come in a standard SOIC-8 small outline package
for surface mounting which makes them ideally
suited for high density applications with limited
space. In addition to eliminating through-holes
requirements, this package conforms to standards
for surface mounted devices.
Characteristics (TA=25°C)
Symbol Min. Typ.
Max. Unit
1.5
Condition
Emitter
Forward Voltage
Reverse Current
Capacitance
VF
IR
CO
1.3
0.1
25
V
IF=10 mA
VR=6.0 V
VR=0
100 µA
pF
Detector
Breakdown Voltage
Collector-Emitter
Emitter-Collector
Collector-Emitter
Dark Current
BVCEO 70
V
V
IC=100 µA
IE=100 µA
VCE=10 V,
IF=0
BVECO
ICEOdark
CCE
7
10
5
50
nA
pF
%
Collector-Emitter
Capacitance
10
VCE=0
A specified minimum and maximum CTR allows a
narrow tolerance in the electrical design of the
adjacent circuits. The high BVCEO of 70 volts gives
a higher safety margin compared to the industry
standard 30 volts.
Package
DC Current Transfer
CTRDC
IF=10 mA,
VCE=5 V
IL205AT
IL206AT
IL207AT
40
63
100
160
80
125
200
320
Maximum Ratings
IL208AT
DC Current Transfer
CTRDC
%
IF=1 mA,
CE=5 V
Emitter
V
Peak Reverse Voltage ....................................... 6.0 V
Continuous Forward Current .......................... 60 mA
Power Dissipation at 25°C ............................. 90 mW
Derate Linearly from 25°C ....................... 1.2 mW/°C
Detector
Collector-Emitter Breakdown Voltage ................ 70 V
Emitter-Collector Breakdown Voltage .................. 7 V
Collector-Base Breakdown Voltage ................... 70 V
Power Dissipation ........................................ 150 mW
Derate Linearly from 25°C ....................... 2.0 mW/°C
Package
Total Package Dissipation at 25°C Ambient
(LED + Detector) ...................................... 240 mW
Derate Linearly from 25°C ....................... 3.3 mW/°C
Storage Temperature .....................–55°C to +150°C
Operating Temperature ................. –55°C to +100°C
Soldering Time at 260°C ............................... 10 sec.
IL205AT
IL206AT
IL207AT
IL208AT
13
22
34
56
25
40
60
95
Collector-Emitter
Saturation Voltage
Isolation Test Voltage
Equivalent DC
Isolation Voltage
Capacitance,
Input to Output
Resistance,
IC=2.0 mA,
IF=10 mA
VCE sat
0.4
V
2500
3535
VACRMS
VDC
IO
CIO
0.5
pF
Input to Output
Switching Time
RIO
tON, tOFF
100
3.0
GΩ
µs
IC=2 mA,
RE=100 Ω,
VCE=10 V
Specifications subject to change.
10.95
Semiconductor Group
4–1