IL208AT

更新时间： 2024-02-01 04:00:23

品牌	Logo	应用领域
英飞凌 - INFINEON		光电输出元件
页数	文件大小	规格书
3页	90K
描述
PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER

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IL208AT 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	SOIC-8	Reach Compliance Code：	compliant
HTS代码：	8541.40.80.00	风险等级：	5.29
Is Samacsys：	N	其他特性：	UL RECOGNIZED
Coll-Emtr Bkdn Voltage-Min：	70 V	配置：	SINGLE
标称电流传输比：	95%	最大暗电源：	50 nA
最大正向电流：	0.06 A	最大绝缘电压：	3000 V
JESD-609代码：	e0	元件数量：	1
最高工作温度：	100 °C	最低工作温度：	-55 °C
光电设备类型：	TRANSISTOR OUTPUT OPTOCOUPLER	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

IL208AT 数据手册

IL205AT/206AT/207AT/

208AT

PHOTOTRANSISTOR

SMALL OUTLINE

FEATURES

SURFACE MOUNT OPTOCOUPLER

• High Current Transfer Ratio, I_F=10mA,

_CE=5 V

Package Dimensions in Inches (mm)

IL205AT, 40 – 80%

IL206AT, 63 –125%

IL207AT, 100 – 200%

IL208AT, 160 – 320%

• High BV_CEO, 70 V

• Isolation Voltage, 2500 VAC_RMS

• Industry Standard SOIC-8 Surface

Mountable Package

.120±.005

(3.05±.13)

.240

Anode

.154±.005 Cathode

Base

Collector

Emitter

(3.91±.13)

(6.10)

.016 (.41)

Pin One ID

7°

.058±.005

(1.49±.13)

40°

.192±.005

(4.88±.13)

.015±.002

(.38±.05)

• Standard Lead Spacing, .05"

• Available in Tape and Reel (suffix T)

(Conforms to EIA Standard RS481A)

• Compatible with Dual Wave, Vapor Phase

and IR Reflow Soldering

.004 (.10)

.008 (.20)

.125±.005

(3.18±.13)

.008 (.20)

5° max.

Lead

R.010

(.25) max.

.050 (1.27)

typ.

.021 (.53)

Coplanarity

±.0015 (.04)

max.

.020±.004

(.15±.10)

2 plcs.

• Underwriters Lab File #E52744

(Code Letter P)

TOLERANCE: ±.005 (unless otherwise noted)

DESCRIPTION

The IL205AT/206AT/207AT/208AT are optically

coupled pairs with a Gallium Arsenide infrared LED

and a silicon NPN phototransistor. Signal information,

including a DC level, can be transmitted by the

device while maintaining a high degree of electrical

isolation between input and output. The IL205/6/7/8

come in a standard SOIC-8 small outline package

for surface mounting which makes them ideally

suited for high density applications with limited

space. In addition to eliminating through-holes

requirements, this package conforms to standards

for surface mounted devices.

Characteristics (T_A=25°C)

Symbol Min. Typ.

Max. Unit

1.5

Condition

Emitter

Forward Voltage

Reverse Current

Capacitance

V_F

I_R

C_O

1.3

0.1

I_F=10 mA

V_R=6.0 V

V_R=0

100 µA

Detector

Breakdown Voltage

Collector-Emitter

Emitter-Collector

Collector-Emitter

Dark Current

BV_CEO70

I_C=100 µA

I_E=100 µA

V_CE=10 V,

I_F=0

BV_ECO

I_CEOdark

C_CE

Collector-Emitter

Capacitance

V_CE=0

A specified minimum and maximum CTR allows a

narrow tolerance in the electrical design of the

adjacent circuits. The high BV_CEOof 70 volts gives

a higher safety margin compared to the industry

standard 30 volts.

Package

DC Current Transfer

CTR_DC

I_F=10 mA,

V_CE=5 V

IL205AT

IL206AT

IL207AT

100

160

125

200

320

Maximum Ratings

IL208AT

DC Current Transfer

CTR_DC

I_F=1 mA,

_CE=5 V

Emitter

Peak Reverse Voltage ....................................... 6.0 V

Continuous Forward Current .......................... 60 mA

Power Dissipation at 25°C ............................. 90 mW

Derate Linearly from 25°C ....................... 1.2 mW/°C

Detector

Collector-Emitter Breakdown Voltage ................ 70 V

Emitter-Collector Breakdown Voltage .................. 7 V

Collector-Base Breakdown Voltage ................... 70 V

Power Dissipation ........................................ 150 mW

Derate Linearly from 25°C ....................... 2.0 mW/°C

Package

Total Package Dissipation at 25°C Ambient

(LED + Detector) ...................................... 240 mW

Derate Linearly from 25°C ....................... 3.3 mW/°C

Storage Temperature .....................–55°C to +150°C

Operating Temperature ................. –55°C to +100°C

Soldering Time at 260°C ............................... 10 sec.

IL205AT

IL206AT

IL207AT

IL208AT

Collector-Emitter

Saturation Voltage

Isolation Test Voltage

Equivalent DC

Isolation Voltage

Capacitance,

Input to Output

Resistance,

I_C=2.0 mA,

I_F=10 mA

V_{CE sat}

0.4

2500

3535

VAC_RMS

VDC

C_IO

0.5

Input to Output

Switching Time

R_IO

t_ON, t_OFF

100

3.0

GΩ

µs

I_C=2 mA,

R_E=100 Ω,

V_CE=10 V

Specifications subject to change.

10.95

Semiconductor Group

4–1

12 3

中文翻译

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