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IL212A

更新时间: 2024-09-07 22:33:47
品牌 Logo 应用领域
英飞凌 - INFINEON 光电输出元件
页数 文件大小 规格书
3页 50K
描述
PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER

IL212A 技术参数

是否Rohs认证:不符合生命周期:Transferred
包装说明:SOIC-8Reach Compliance Code:compliant
HTS代码:8541.40.80.00风险等级:5.48
Is Samacsys:N其他特性:UL RECOGNIZED
Coll-Emtr Bkdn Voltage-Min:30 V配置:SINGLE
标称电流传输比:50%最大暗电源:50 nA
最大正向电流:0.06 A最大绝缘电压:2500 V
JESD-609代码:e0元件数量:1
最高工作温度:100 °C最低工作温度:-55 °C
光电设备类型:TRANSISTOR OUTPUT OPTOCOUPLER端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

IL212A 数据手册

 浏览型号IL212A的Datasheet PDF文件第2页浏览型号IL212A的Datasheet PDF文件第3页 
IL211A/212A/213A  
PHOTOTRANSISTOR  
SMALL OUTLINE  
SURFACE MOUNT OPTOCOUPLER  
FEATURES  
Dimensions in inches (mm)  
• High Current Transfer Ratio  
IL211A—20% Minimum  
IL212A—50% Minimum  
IL213A—100% Minimum  
• Isolation Voltage, 2500 VAC  
• Electrical Specifications Similar to  
Standard 6 Pin Coupler  
• Industry Standard SOIC-8 Surface  
Mountable Package  
.120±.005  
(3.05±.13)  
.240  
(6.10)  
Anode  
8
7
6
5
1
2
3
4
NC  
.154±.005 Cathode  
Base  
C
L
(3.91±.13)  
.016 (.41)  
.015±.002  
NC  
NC  
Collector  
Emitter  
RMS  
Pin One ID  
7°  
.058±.005  
(1.49±.13)  
40°  
.192±.005  
(4.88±.13)  
(.38±.05)  
• Standard Lead Spacing, .05"  
• Available in Tape and Reel Option  
(Conforms to EIA Standard RS481A)  
• Compatible with Dual Wave, Vapor Phase  
and IR Reflow Soldering  
.004 (.10)  
.008 (.20)  
.125±.005  
(3.18±.13)  
.008 (.20)  
5° max.  
Lead  
R.010  
(.25) max.  
.050 (1.27)  
typ.  
Coplanarity  
±.0015 (.04)  
max.  
.020±.004  
(.15±.10)  
2 plcs.  
.021 (.53)  
• Underwriters Lab File #E52744  
(Code Letter P)  
DESCRIPTION  
Characteristics (T =25°C)  
A
The IL211A/212A/213A are optically coupled pairs  
with a Gallium Arsenide infrared LED and a silicon  
NPN phototransistor. Signal information, including a  
DC level, can be transmitted by the device while  
maintaining a high degree of electrical isolation  
between input and output. The IL211A//212A/213A  
comes in a standard SOIC-8 small outline package  
for surface mounting which makes it ideally suited  
for high density applications with limited space. In  
addition to eliminating through-holes requirements,  
this package conforms to standards for surface  
mounted devices.  
Symbol Min.  
Typ.  
Max. Unit  
Condition  
Emitter  
Forward Voltage  
Reverse Current  
Capacitance  
V
1.3  
0.1  
25  
1.5  
V
I =10 mA  
F
F
I
100  
µA  
pF  
V =6.0 V  
R
R
C
V =0  
R
O
Detector  
Breakdown Voltage  
B
B
30  
7
V
V
I =10 µA  
VCEO  
VECO  
C
I =10 µA  
E
Dark Current,  
I
5
50  
nA  
V =10 V  
CE  
CEOdark  
Collector-Emitter  
I =0  
A choice of 20, 50, and 100% minimum CTR at  
F
I =10 mA makes these optocouplers suitable for a  
variety of different applications.  
F
Capacitance,  
Collector-Emitter  
C
10  
pF  
V =0  
CE  
CE  
Maximum Ratings  
Package  
Emitter  
DC Current Transfer  
Ratio  
IL211A  
IL212A  
IL213A  
CTR  
%
I =10 mA,  
F
DC  
Peak Reverse Voltage .....................................6.0 V  
Continuous Forward Current .........................60 mA  
Power Dissipation at 25°C............................90 mW  
Derate Linearly from 25°C ......................1.2 mW/°C  
V
=5 V  
CE  
20  
50  
100  
50  
80  
130  
Saturation Voltage,  
Collector-Emitter  
V
0.4  
I =10 mA,  
F
CEsat  
Detector  
I =2.0 mA  
C
Collector-Emitter Breakdown Voltage ...............30 V  
Emitter-Collector Breakdown Voltage .................7 V  
Collector-Base Breakdown Voltage ..................70 V  
Power Dissipation ......................................150 mW  
Derate Linearly from 25°C2.0 mW/°C  
Isolation Test  
Voltage  
V
2500  
VAC  
pF  
IO  
RMS  
Capacitance,  
Input toOutput  
C
R
0.5  
100  
3.0  
IO  
Package  
Resistance,  
Input to Output  
GΩ  
µs  
IO  
Total Package Dissipation at 25°C Ambient  
(LED + Detector) ....................................280 mW  
Derate Linearly from 25°C ......................3.3 mW/°C  
Storage Temperature ...................–55°C to +150°C  
Operating Temperature ...............–55°C to +100°C  
Soldering Time at 260°C ............................. 10 sec.  
Switching Time  
t
,t  
I =2 mA,  
on off  
C
R =100 ,  
E
V
=10 V  
CE  
5–1  

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