IL212AT

更新时间： 2024-01-05 21:11:41

品牌	Logo	应用领域
英飞凌 - INFINEON		光电输出元件
页数	文件大小	规格书
3页	48K
描述
PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER

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中文翻译

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技术参数
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IL212AT 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.92
Is Samacsys：	N	当前传输比率-最小值：	50%
最大正向电流：	0.06 A	最大正向电压：	1.5 V
最大绝缘电压：	1500 V	JESD-609代码：	e0
安装特点：	SURFACE MOUNT	元件数量：	1
最高工作温度：	100 °C	最低工作温度：	-55 °C
最大功率耗散：	0.25 W	最长响应时间：	0.000003 s
子类别：	Optocoupler - Transistor Outputs	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

IL212AT 数据手册

IL211AT/IL212AT/IL213AT

PHOTOTRANSISTOR

SMALL OUTLINE

SURFACE MOUNT OPTOCOUPLER

NEW

FEATURES

Package Dimensions in Inches (mm)

• High Current Transfer Ratio

IL211AT—20% Minimum

IL212AT—50% Minimum

.120±.005

(3.05±.13)

.240

Anode

Base

Collector

Emitter

.154±.005 Cathode

(3.91±.13)

IL213AT—100% Minimum

(6.10)

• Isolation Voltage, 2500 VAC_RMS

• Electrical Specifications Similar to

Standard 6 Pin Coupler

.016 (.41)

Pin One ID

7°

.058±.005

(1.49±.13)

40°

.192±.005

(4.88±.13)

.015±.002

(.38±.05)

• Industry Standard SOIC-8 Surface

Mountable Package

• Standard Lead Spacing, .05"

.004 (.10)

.008 (.20)

.125±.005

(3.18±.13)

.008 (.20)

5° max.

• Available in Tape and Reel (suffix T)

(Conforms to EIA Standard RS481A)

• Compatible with Dual Wave, Vapor Phase

and IR Reflow Soldering

• Underwriters Lab File #E52744

(Code Letter P)

Lead

R.010

.050 (1.27)

typ.

.021 (.53)

Coplanarity

±.0015 (.04)

max.

(.25) max.

.020±.004

(.15±.10)

2 plcs.

TOLERANCE: ±.005 (unless otherwise noted)

Characteristics (T_A=25°C)

Symbol Min. Typ. Max. Unit

Condition

DESCRIPTION

Emitter

The IL211AT/212AT/213AT are optically coupled

pairs with a Gallium Arsenide infrared LED and a

silicon NPN phototransistor. Signal information,

including a DC level, can be transmitted by the device

while maintaining a high degree of electrical isolation

between input and output. The IL211AT//212AT/

213AT comes in a standard SOIC-8 small outline

package for surface mounting which makes it ideally

suited for high density applications with limited space.

In addition to eliminating through-holes requirements,

this package conforms to standards for surface

mounted devices.

Forward Voltage

Reverse Current

Capacitance

Detector

Breakdown Voltage BV_CEO

BV_ECO

V_F

I_R

C_O

1.3

0.1

1.5

100 µA

I_F=10 mA

V_R=6.0 V

V_R=0

I_C=10 µA

I_E=10 µA

V_CE=10 V,

I_F=0

Collector-Emitter

Dark Current

Collector-Emitter

Capacitance

Package

I_CEOdark

C_CE

V_CE=0

DC Current Transfer CTR_DC

I_F=10 mA

V_CE=5 V

A choice of 20, 50, and 100% minimum CTR at

I_F=10 mA makes these optocouplers suitable for a

variety of different applications.

IL211AT

IL212AT

IL213AT

Collector-Emitter

Saturation Voltage V_{CE sat}

20 50

50 80

100 130

Maximum Ratings

Emitter

0.4

I_F=10 mA,

I_C=2.0 mA

Peak Reverse Voltage.......................................6.0 V

Continuous Forward Current .......................... 60 mA

Power Dissipation at 25°C .............................90 mW

Derate Linearly from 25°C .......................1.2 mW/°C

Detector

Collector-Emitter Breakdown Voltage ................30 V

Emitter-Collector Breakdown Voltage ..................7 V

Collector-Base Breakdown Voltage ...................70 V

Power Dissipation ........................................150 mW

Derate Linearly from 25°C .......................2.0 mW/°C

Package

Total Package Dissipation at 25°C Ambient

(LED + Detector) ......................................280 mW

Derate Linearly from 25°C .......................3.3 mW/°C

Storage Temperature .....................–55°C to +150°C

Operating Temperature .................–55°C to +100°C

Soldering Time at 260°C ............................... 10 sec.

Isolation Test

Voltage

V_IO

C_IO

2500

0.5

VAC_RMS

Capacitance,

Input to Output

Resistance,

Input to Output

Switching Time

R_IO

t_ON, t_OFF

100

3.0

GΩ

µs

I_C=2 mA,

R_E=100 Ω,

V_CE=10 V

Specifications subject to change.

Semiconductor Group

4–4

10.95

12 3

中文翻译

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