Datasheet > IKQ75N120CH3

IKQ75N120CH3

更新时间： 2023-09-03 20:32:29

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
16页	1626K
描述
IGBT HighSpeed 3

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中文翻译

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数据手册

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IKQ75N120CH3 数据手册

IKQ75N120CH3

HighꢀspeedꢀswitchingꢀseriesꢀthirdꢀgenerationꢀIGBT

MaximumꢀRatings

Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.

Parameter

Symbol

Value

Unit

Collector-emitterꢀvoltage,ꢀT_vjꢀ≥ꢀ25°C

V_CE

1200

DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀT_vjmax

T_cꢀ=ꢀ25°C

T_cꢀ=ꢀ134°C

I_C

150.0

75.0

Pulsedꢀcollectorꢀcurrent,ꢀt_pꢀlimitedꢀbyꢀT_vjmax

I_Cpuls

300.0

Turn off safe operating area

V_CEꢀ≤ꢀ1200V,ꢀT_vjꢀ≤ꢀ175°C,ꢀt_pꢀ=ꢀ1µs

Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀT_vjmax

T_cꢀ=ꢀ25°C

T_cꢀ=ꢀ100°C

I_F

150.0

75.0

Diodeꢀpulsedꢀcurrent,ꢀt_pꢀlimitedꢀbyꢀT_vjmax

I_Fpuls

V_GE

300.0

Gate-emitter voltage

TransientꢀGate-emitterꢀvoltageꢀ(t_pꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)

±20

±30

Short circuit withstand time

V_GEꢀ=ꢀ15.0V,ꢀV_CCꢀ≤ꢀ600V

Allowed number of short circuits < 1000

Time between short circuits: ≥ 1.0s

T_vjꢀ=ꢀ175°C

t_SC

µs

PowerꢀdissipationꢀT_cꢀ=ꢀ25°C

PowerꢀdissipationꢀT_cꢀ=ꢀ134°C

938.0

256.0

P_tot

Operating junction temperature

Storage temperature

T_vj

-40...+175

-55...+150

°C

T_stg

Soldering temperature,

wave soldering 1.6mm (0.063in.) from case for 10s

°C

260

ThermalꢀResistance

Value

min. typ. max.

Parameter

Symbol Conditions

Unit

R_thꢀCharacteristics

IGBT thermal resistance,¹⁾

junction - case

Diode thermal resistance,¹⁾

junction - case

R_th(j-c)

R_th(j-a)

0.16 K/W

0.28 K/W

40 K/W

Thermal resistance

junction - ambient

¹⁾Thermal resistance of thermal grease R_th(c-s)(case to heat sink) of more than 0.1K/W not included.

Datasheet

Vꢀ2.3

2019-04-15

1 234 5 6 7...16

中文翻译

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