IKQ40N120CH3
HighꢀspeedꢀswitchingꢀseriesꢀthirdꢀgenerationꢀIGBT
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
340
3.60
19.0
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ600V,
IFꢀ=ꢀ40.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ600A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-134
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
30
46
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ175°C,
VCCꢀ=ꢀ600V,ꢀICꢀ=ꢀ40.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ12.0Ω,ꢀRG(off)ꢀ=ꢀ12.0Ω,
Lσꢀ=ꢀ90nH,ꢀCσꢀ=ꢀ67pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
375
69
ns
ns
Turn-on energy
Eon
Eoff
Ets
4.50
2.50
7.00
mJ
mJ
mJ
Turn-off energy
Total switching energy
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
500
7.10
27.0
-
-
-
ns
µC
A
Tvjꢀ=ꢀ175°C,
VRꢀ=ꢀ600V,
IFꢀ=ꢀ40.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ600A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-97
-
A/µs
Datasheet
5
Vꢀ2.3
2019-04-15