IKB10N60TXT

更新时间： 2024-02-15 04:50:40

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管晶体管功率控制双极性晶体管栅
页数	文件大小	规格书
14页	396K
描述
暂无描述

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IKB10N60TXT 数据手册

IKP10N60T

IKB10N60T

TrenchStop Series

Low Loss DuoPack : IGBT in Trench and Fieldstop technology

with soft, fast recovery anti-parallel EmCon HE diode

•

Very low V_CE(sat)1.5 V (typ.)

Maximum Junction Temperature 175 °C

Short circuit withstand time – 5µs

Designed for :

- Variable Speed Drive for washing machines, air

conditioners and induction cooking

- Uninterrupted Power Supply

•

Trench and Fieldstop technology for 600 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- very high switching speed

P-TO-220-3-1

(TO-220AB)

P-TO-263-3-2 (D²-PAK)

(TO-263AB)

- low V_CE(sat)

•

NPT technology offers easy parallel switching capability due to

positive temperature coefficient in V_CE(sat)

Low EMI

•

Low Gate Charge

Very soft, fast recovery anti-parallel EmCon HE diode

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V_CE

I_C

V_{CE(sat),Tj=25°C}

1.5V

T_j,max

175°C

Marking Code Package

Ordering Code

Q67040S4682

Q67040S4681

IKP10N60T

IKB10N60T

600V

10A

K10T60

TO-220

TO-263

1.5V

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

DC collector current, limited by T_jmax

T_C= 25°C

V_CE

I_C

600

T_C= 100°C

Pulsed collector current, t_plimited by T_jmax

Turn off safe operating area V_CE≤ 600V, T_j≤ 175°C

Diode forward current, limited by T_jmax

T_C= 25°C

I_Cpuls

I_F

T_C= 100°C

Diode pulsed current, t_plimited by T_jmax

Gate-emitter voltage

I_Fpuls

V_GE

t_SC

±20

Short circuit withstand time¹⁾

V_GE= 15V, V_CC≤ 400V, T_j≤ 150°C

Power dissipation T_C= 25°C

Operating junction temperature

Storage temperature

µs

P_tot

T_j

110

-40...+175

-55...+175

°C

T_stg

¹⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev. 2 Oct-04

Power Semiconductors

12 3 4 5 6 7...14

下载PDF

与IKB10N60TXT相关器件

型号	品牌	描述	获取价格	数据表
IKB15N60T	INFINEON	IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE di	获取价格
IKB15N60TATMA1	INFINEON	Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PL	获取价格
IKB15N65EH5	INFINEON	Insulated Gate Bipolar Transistor,	获取价格
IKB15N65EH5ATMA1	INFINEON	Insulated Gate Bipolar Transistor,	获取价格
IKB20N60H3	INFINEON	Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PL	获取价格
IKB20N60T	INFINEON	IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE dio	获取价格