Datasheet > IDWD50E65E7

IDWD50E65E7

更新时间： 2024-04-09 19:02:41

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	1331K
描述
Soft-switching 650 V, 50 A emitter controlled 7?silicon diode?in TO-247 real to leads 2pin package with improved softness, humidity ruggedness and reliability for Indutrial and Home appliance application.

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IDWD50E65E7 数据手册

IDWD50E65E7

The Sof 650 V Emitter Controlled Si Diode 7 oﬀers improved reliability

3 Characteristics diagrams

Typical reverse recovery charge as a function of diode Typical reverse recovery current as a function of

current slope

Q_rr= f(di_F/dt)

diode current slope

I_rrm= f(di_F/dt)

V_R= 400 V, I_F= 50 A

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

600

900

1200

1500

1800

2100

600

900

1200

1500

1800

2100

Typical diode peak rate of fall of reverse recovery

current as a function of diode current slope

Typical reverse energy losses as a function of diode

current slope

di_rr/dt = f(di_F/dt)

E_rec= f(di_F/dt)

V_R= 400 V, I_F= 50 A

-300

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

-600

-900

-1200

-1500

-1800

600

900

1200

1500

1800

2100

600

900

1200

1500

1800

2100

Datasheet

Revision 1.10

2023-11-09

1...4 5 678 9 10 11

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