Datasheet > IDWD40E65E7

IDWD40E65E7

更新时间： 2024-04-09 19:02:38

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	1312K
描述
Soft-switching 650 V, 40 A emitter controlled 7?silicon diode?in TO-247 real to leads 2pin package with improved softness, humidity ruggedness and reliability for Indutrial and Home appliance application.

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IDWD40E65E7 数据手册

IDWD40E65E7

The Sof 650 V Emitter Controlled Si Diode 7 oﬀers improved reliability

1 Package

Package

Table 1

Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

Unit

Min.

Max.

Internal emitter

inductance measured 5

mm (0.197 in.) from case

L_E

Storage temperature

Soldering temperature

T_stg

-55

150

260

°C

T_sold

wave soldering 1.6 mm (0.063 in.) from case

for 10 s

Mounting torque

M3 screw, Maximum of mounting processes:

0.6

K/W

Thermal resistance,

junction-ambient

R_th(j-a)

R_th(j-c)

Diode thermal resistance,

junction-case

0.95

Diode

Table 2

Maximum rated values

Symbol Note or test condition

Parameter

Values

Unit

Repetitive peak reverse

voltage

V_RRM

T_vj≥ 25 °C

650

Diode forward current,

limited by T_vjmax

I_F

limited by bondwire

T_c= 25 °C

T_c= 100 °C

Diode pulsed current, t_p

limited by T_vjmax

I_Fpulse

I_FSM

160

Diode surge non repetitive

forward current, sine

halfwave

t_p= 10 ms

T_c= 25 °C

149

Power dissipation

P_tot

T_c= 25 °C

159

T_c= 100 °C

Table 3

Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

1.65

1.6

Unit

Min.

Max.

Diode forward voltage

V_F

I_F= 40 A

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

2.1

1.55

(table continues...)

Datasheet

Revision 1.10

2023-11-09

1 234 5 6 7...11

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