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IDT72291L20PFI PDF预览

IDT72291L20PFI

更新时间: 2024-02-20 02:33:09
品牌 Logo 应用领域
艾迪悌 - IDT 先进先出芯片
页数 文件大小 规格书
26页 270K
描述
CMOS SuperSync FIFO

IDT72291L20PFI 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:QFP
包装说明:STQFP-64针数:64
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.84
Is Samacsys:N最长访问时间:12 ns
其他特性:RETRANSMIT; AUTO POWER DOWN; EASY EXPANDABLE IN DEPTH AND WIDTH周期时间:20 ns
JESD-30 代码:S-PQFP-G64JESD-609代码:e3
长度:10 mm内存密度:1179648 bit
内存宽度:9湿度敏感等级:3
功能数量:1端子数量:64
字数:131072 words字数代码:128000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX9
可输出:YES封装主体材料:PLASTIC/EPOXY
封装代码:LFQFP封装形状:SQUARE
封装形式:FLATPACK, LOW PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1.6 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:MATTE TIN
端子形式:GULL WING端子节距:0.5 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
宽度:10 mmBase Number Matches:1

IDT72291L20PFI 数据手册

 浏览型号IDT72291L20PFI的Datasheet PDF文件第2页浏览型号IDT72291L20PFI的Datasheet PDF文件第3页浏览型号IDT72291L20PFI的Datasheet PDF文件第4页浏览型号IDT72291L20PFI的Datasheet PDF文件第6页浏览型号IDT72291L20PFI的Datasheet PDF文件第7页浏览型号IDT72291L20PFI的Datasheet PDF文件第8页 
IDT72281/72291  
CMOS SuperSync FIFO™ 65,536 x 9 and 131,072 x 9  
COMMERCIALANDINDUSTRIAL  
TEMPERATURERANGES  
ABSOLUTEMAXIMUMRATINGS  
RECOMMENDEDDCOPERATING  
CONDITIONS  
Symbol  
Rating  
Commercial  
Unit  
VTERM  
TerminalVoltage  
with respect to GND  
–0.5to+7  
V
Symbol  
Parameter  
Min.  
Typ.  
Max.  
Unit  
VCC  
SupplyVoltage(Coml&Ind’l)  
SupplyVoltage(Coml&Ind’l)  
4.5  
5.0  
5.5  
V
TSTG  
IOUT  
Storage  
Temperature  
–55to+125  
–50to+50  
° C  
GND  
VIH  
0
0
0
V
InputHighVoltage  
(Com’l & Ind’l)  
DCOutputCurrent  
mA  
2.0  
V
NOTE:  
(1)  
VIL  
InputLowVoltage  
(Com’’ & Ind’l)  
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may  
cause permanent damage to the device. This is a stress rating only and functional  
operation of the device at these or any other conditions above those indicated in  
the operational sections of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect reliability.  
0
0.8  
70  
V
TA  
OperatingTemperature  
Commercial  
°C  
TA  
OperatingTemperature  
Industrial  
-40  
85  
°C  
NOTE  
1. 1.5V undershoots are allowed for 10ns once per cycle.  
DCELECTRICALCHARACTERISTICS  
(Commercial: VCC = 5V ± 10%, TA = 0°C to +70°C; Industrial: VCC = 5V ± 10%, TA = -40° to +85°C)  
IDT72281  
IDT72291  
Commercial & Industrial(1)  
tCLK = 10, 15, 20 ns  
Symbol  
Parameter  
Min.  
Max.  
Unit  
(2)  
ILI  
InputLeakageCurrent  
OutputLeakageCurrent  
–1  
1
µA  
µA  
V
(3)  
ILO  
–10  
2.4  
10  
0.4  
VOH  
VOL  
Output Logic 1Voltage, IOH = –2 mA  
Output Logic 0Voltage, IOL = 8 mA  
V
(4,5,6)  
ICC1  
Active Power Supply Current  
StandbyCurrent  
80  
20  
mA  
mA  
(4,7)  
ICC2  
NOTES:  
1. Industrial temperature range product for 15ns and 20ns speed grade are available as a standard device.  
2. Measurements with 0.4 VIN VCC.  
3. OE VIH, 0.4 VOUT VCC.  
4. Tested with outputs open (IOUT = 0).  
5. RCLK and WCLK toggle at 20 MHz and data inputs switch at 10 MHz.  
6. Typical ICC1 = 20 + 1.8*fS + 0.02*CL*fS (in mA) with VCC = 5V, tA = 25°C, fS = WCLK frequency = RCLK frequency (in MHz, using TTL levels), data switching  
at fS/2, CL = capacitive load (in pF).  
7. All Inputs = VCC – 0.2V or GND + 0.2V, except RCLK and WCLK, which toggle at 20 MHz.  
CAPACITANCE (TA = +25°C, F = 1.0MHz)  
Symbol  
Parameter(1)  
Conditions  
Max.  
Unit  
(2)  
CIN  
Input  
VIN = 0V  
10  
pF  
Capacitance  
(1,2)  
COUT  
Output  
VOUT = 0V  
10  
pF  
Capacitance  
NOTES:  
1. With output deselected, (OE VIH).  
2. Characterized values, not currently tested.  
5

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