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IDT7202LA30DGB PDF预览

IDT7202LA30DGB

更新时间: 2024-11-24 13:00:07
品牌 Logo 应用领域
艾迪悌 - IDT 先进先出芯片
页数 文件大小 规格书
14页 156K
描述
FIFO, 1KX9, 30ns, Asynchronous, CMOS, CDIP28, 0.600 INCH, GREEN, CERAMIC, DIP-28

IDT7202LA30DGB 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DIP
包装说明:DIP, DIP28,.6针数:28
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.03
Is Samacsys:N最长访问时间:30 ns
其他特性:RETRANSMIT周期时间:40 ns
JESD-30 代码:R-GDIP-T28JESD-609代码:e3
长度:37.211 mm内存密度:9216 bit
内存集成电路类型:OTHER FIFO内存宽度:9
功能数量:1端子数量:28
字数:1024 words字数代码:1000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:1KX9
可输出:NO封装主体材料:CERAMIC, GLASS-SEALED
封装代码:DIP封装等效代码:DIP28,.6
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL峰值回流温度(摄氏度):225
电源:5 V认证状态:Not Qualified
筛选级别:MIL-STD-883 Class B座面最大高度:5.08 mm
最大待机电流:0.015 A子类别:FIFOs
最大压摆率:0.1 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:MILITARY端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:20
宽度:15.24 mmBase Number Matches:1

IDT7202LA30DGB 数据手册

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IDT7200L  
IDT7201LA  
IDT7202LA  
CMOS ASYNCHRONOUS FIFO  
256 x 9, 512 x 9, 1K x 9  
Integrated Device Technology, Inc.  
FEATURES:  
DESCRIPTION:  
First-In/First-Out dual-port memory  
256 x 9 organization (IDT7200)  
512 x 9 organization (IDT7201)  
1K x 9 organization (IDT7202)  
The IDT7200/7201/7202 are dual-port memories that load  
and empty data on a first-in/first-out basis. The devices use  
Full and Empty flags to prevent data overflow and underflow  
andexpansionlogictoallowforunlimitedexpansioncapability  
in both word size and depth.  
Low power consumption  
— Active: 770mW (max.)  
—Power-down: 2.75mW (max.)  
Ultra high speed—12ns access time  
Asynchronous and simultaneous read and write  
Fully expandable by both word depth and/or bit width  
Pin and functionally compatible with 720X family  
Status Flags: Empty, Half-Full, Full  
The reads and writes are internally sequential through the  
use of ring pointers, with no address information required to  
loadandunloaddata. Dataistoggledinandoutofthedevices  
through the use of the Write (W) and Read (R) pins.  
The devices utilizes a 9-bit wide data array to allow for  
control and parity bits at the user’s option. This feature is  
especially useful in data communications applications where  
it is necessary to use a parity bit for transmission/reception  
error checking. It also features a Retransmit (RT) capability  
that allows for reset of the read pointer to its initial position  
when RT is pulsed low to allow for retransmission from the  
beginning of data. A Half-Full Flag is available in the single  
device mode and width expansion modes.  
The IDT7200/7201/7202 are fabricated using IDT’s high-  
speed CMOS technology. They are designed for those  
applications requiring asynchronous and simultaneous read/  
writes in multiprocessing and rate buffer applications. Military  
grade product is manufactured in compliance with the latest  
revision of MIL-STD-883, Class B.  
Auto-retransmit capability  
High-performance CEMOS technology  
Military product compliant to MIL-STD-883, Class B  
Standard Military Drawing #5962-87531, 5962-89666,  
5962-89863 and 5962-89536 are listed on this function  
Industrial temperature range (-40oC to +85oC) is  
available, tested to military electrical specifications  
FUNCTIONAL BLOCK DIAGRAM  
DATA INPUTS  
(D0–D8)  
WRITE  
W
CONTROL  
WRITE  
POINTER  
RAM  
READ  
POINTER  
ARRAY  
256 x 9  
512 x 9  
1024 x 9  
THREE-  
STATE  
BUFFERS  
RS  
DATA OUTPUTS  
(Q0–Q8)  
READ  
R
RESET  
LOGIC  
CONTROL  
FLAG  
LOGIC  
EF  
FF  
FL/RT  
EXPANSION  
LOGIC  
XO/HF  
XI  
2679 drw 01  
The IDT logo is a trademark of Integrated Device Technology, Inc.  
MILITARY AND COMMERCIAL TEMPERATURE RANGES  
DECEMBER 1996  
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.  
1996 Integrated Device Technology, Inc.  
DSC-2679/7  
5.03  
1

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