Datasheet > IDT71V3558XS166BQGI

IDT71V3558XS166BQGI

更新时间： 2024-11-15 00:22:39

品牌	Logo	应用领域
艾迪悌 - IDT		静态存储器
页数	文件大小	规格书
25页	489K
描述
3.3V Synchronous ZBT SRAMs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IDT71V3558XS166BQGI 数据手册

浏览型号IDT71V3558XS166BQGI的Datasheet PDF文件第2页

浏览型号IDT71V3558XS166BQGI的Datasheet PDF文件第3页

浏览型号IDT71V3558XS166BQGI的Datasheet PDF文件第4页

浏览型号IDT71V3558XS166BQGI的Datasheet PDF文件第5页

浏览型号IDT71V3558XS166BQGI的Datasheet PDF文件第6页

浏览型号IDT71V3558XS166BQGI的Datasheet PDF文件第7页

IDT71V3556S/XS

IDT71V3558S/XS

IDT71V3556SA/XSA

IDT71V3558SA/XSA

128K x 36, 256K x 18

3.3V Synchronous ZBT SRAMs

3.3V I/O, Burst Counter

Pipelined Outputs

Description

Features

◆

TheIDT71V3556/58are3.3Vhigh-speed4,718,592-bit(4.5Mega-

bit) synchronous SRAMS. They are designed to eliminate dead bus

cycles when turning the bus around between reads and writes, or

writes and reads. Thus, they have been given the name ZBT^TM, or

Zero Bus Turnaround.

128K x 36, 256K x 18 memory configurations

◆

Supports high performance system speed - 200 MHz (x18)

(3.2 ns Clock-to-Data Access)

Supports high performance system speed - 166 MHz (x36)

◆

(3.5 ns Clock-to-Data Access)

ZBT^TMFeature - No dead cycles between write and read

◆

Address and control signals are applied to the SRAM during one

clock cycle, and two cycles later the associated data cycle occurs, be

it read or write.

cycles

◆

Internally synchronized output buffer enable eliminates the

The IDT71V3556/58 contain data I/O, address and control signal

registers. Output enable is the only asynchronous signal and can be

used to disable the outputs at any given time.

need to control OE

Single R/W (READ/WRITE) control pin

Positive clock-edge triggered address, data, and control

◆

A Clock Enable (CEN) pin allows operation of the IDT71V3556/58

to be suspended as long as necessary. All synchronous inputs are

ignored when (CEN) is high and the internal device registers will hold

their previous values.

There are three chip enable pins (CE¹, CE2, CE2) that allow the

user to deselect the device when desired. If any one of these three are

not asserted when ADV/LD is low, no new memory operation can be

initiated. However, any pending data transfers (reads or writes) will be

completed.Thedatabuswilltri-statetwocyclesafterchipisdeselected

orawriteisinitiated.

signal registers for fully pipelined applications

4-word burst capability (interleaved or linear)

Individual byte write (BW1 - BW4) control (May tie active)

Three chip enables for simple depth expansion

3.3V power supply (±5%), 3.3V I/O Supply (VDDQ)

Optional- Boundary Scan JTAG Interface (IEEE 1149.1

compliant)

Packaged in a JEDEC standard 100-pin plastic thin quad

flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch

ball grid array (fBGA)

◆

Pin Description Summary

-A17

Address Inputs

Input

Output

Input

I/O

Synchronous

Asynchronous

Synchronous

N/A

Chip Enables

1, CE

, CE

Output Enable

R/W

Read/Write Signal

Clock Enable

CEN

Individual Byte Write Selects

Clock

1, BW

, BW

CLK

ADV/LD

LBO

TMS

TDI

Advance burst address / Load new address

Linear / Interleaved Burst Order

Test Mode Select

Test Data Input

Synchronous

Static

Synchronous

N/A

TCK

Test Clock

TDO

TRST

Test Data Output

Synchronous

Asynchronous

Synchronous

Static

JTAG Reset (Optional)

Sleep Mode

I/O

0-I/O31, I/OP1-I/OP4

Data Input / Output

Core Power, I/O Power

Ground

DD, VDDQ

Supply

Static

5281 tbl 01

JANUARY 2015

DSC-5281/12

12 3 4 5 6 7...25

中文翻译

下载PDF

与IDT71V3558XS166BQGI相关器件

型号	品牌	获取价格	描述	数据表
IDT71V3558XS166BQGI8	IDT	获取价格	ZBT SRAM, 256KX18, 3.5ns, CMOS, PBGA165
IDT71V3558XS166BQI	IDT	获取价格	ZBT SRAM, 256KX18, 3.5ns, CMOS, PBGA165
IDT71V3558XS166BQI8	IDT	获取价格	ZBT SRAM, 256KX18, 3.5ns, CMOS, PBGA165
IDT71V3558XS166PFG	IDT	获取价格	3.3V Synchronous ZBT SRAMs
IDT71V3558XS166PFGI	IDT	获取价格	3.3V Synchronous ZBT SRAMs
IDT71V3558XS166PFGI8	IDT	获取价格	ZBT SRAM, 256KX18, 3.5ns, CMOS, PQFP100
IDT71V3558XS166PFI	IDT	获取价格	ZBT SRAM, 256KX18, 3.5ns, CMOS, PQFP100
IDT71V3558XS166PFI8	IDT	获取价格	ZBT SRAM, 256KX18, 3.5ns, CMOS, PQFP100
IDT71V3558XS200BG	IDT	获取价格	ZBT SRAM, 256KX18, 3.2ns, CMOS, PBGA119
IDT71V3558XS200BG8	IDT	获取价格	ZBT SRAM, 256KX18, 3.2ns, CMOS, PBGA119

与IDT71V3558XS166BQGI相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

1
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

1
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

29
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

12

产品中心

服务支持

精选活动

关于我们

帮助中心

IDT71V3558XS166BQGI

IDT71V3558XS166BQGI 数据手册

与IDT71V3558XS166BQGI相关器件

与IDT71V3558XS166BQGI相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IDT71V3558XS166BQGI

IDT71V3558XS166BQGI 数据手册

与IDT71V3558XS166BQGI相关器件

与IDT71V3558XS166BQGI相关文章

您还可以找

您在本页遇到什么问题？