128K X 36, 256K X 18
IDT71V2576S
IDT71V2578S
IDT71V2576SA
IDT71V2578SA
3.3VSynchronousSRAMs
2.5V I/O, Pipelined Outputs,
Burst Counter, Single Cycle Deselect
Features
Description
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128K x 36, 256K x 18 memory configurations
The IDT71V2576/78 are high-speed SRAMs organized as 128K x
36/256Kx18.TheIDT71V2576/78SRAMscontainwrite,data,address
andcontrolregisters. InternallogicallowstheSRAMtogenerateaself-
timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewrite
cycle.
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Supports high system speed:
CommercialandIndustrial:
– 150MHz 3.8ns clock access time
– 133MHz 4.2ns clock access time
LBO input selects interleaved or linear burst mode
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Theburstmodefeatureoffersthehighestlevelofperformancetothe
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Self-timedwritecyclewithglobalwritecontrol(GW),bytewrite systemdesigner,astheIDT71V2576/78canprovidefourcyclesofdata
enable (BWE), and byte writes (BWx)
3.3V core power supply
Power down controlled by ZZ input
2.5V I/O
Optional - Boundary Scan JTAG Interface (IEEE 1149.1 operationisselected(ADV=LOW),thesubsequentthreecyclesofoutput
compliant) datawillbeavailabletotheuseronthenextthreerisingclockedges. The
Packaged in a JEDEC Standard 100-pin plastic thin quad orderofthesethreeaddressesaredefinedbytheinternalburstcounter
flatpack(TQFP),119ballgridarray(BGA)and165finepitchball andthe LBO inputpin.
grid array (fBGA)
forasingleaddress presentedtotheSRAM. Aninternalburstaddress
counteracceptsthefirstcycleaddressfromtheprocessor,initiatingthe
accesssequence.Thefirstcycleofoutputdatawillbepipelinedforone
cycle before it is available on the next rising clock edge. If burst mode
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The IDT71V2576/78 SRAMs utilize IDT’s latest high-performance
CMOSprocessandarepackagedinaJEDECstandard14mmx20mm
100-pinthinplasticquadflatpack(TQFP)aswellasa119 ballgridarray
(BGA) and 165 fine pitch ball grid array (fBGA).
PinDescriptionSummary
A0-A17
Address Inputs
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Output
Input
Input
I/O
Synchronous
Synchronous
Synchronous
Asynchronous
Synchronous
Synchronous
Synchronous
N/A
Chip Enable
CE
CS0, CS1
OE
Chip Selects
Output Enable
Global Write Enable
Byte Write Enable
Individual Byte Write Selects
Clock
GW
BWE
(1)
BW1, BW2, BW3, BW4
CLK
Burst Address Advance
Address Status (Cache Controller)
Address Status (Processor)
Linear / Interleaved Burst Order
Test Mode Select
Test Data Input
Synchronous
Synchronous
Synchronous
DC
ADV
ADSC
ADSP
LBO
TMS
Synchronous
Synchronous
N/A
TDI
TCK
Test Clock
TDO
Test Data Output
Synchronous
Asynchronous
Asynchronous
Synchronous
N/A
JTAG Reset (Optional)
Sleep Mode
TRST
ZZ
I/O0-I/O31, I/OP1-I/OP4
VDD, VDDQ
VSS
Data Input / Output
Core Power, I/O Power
Ground
Supply
Supply
N/A
4876 tbl 01
NOTE:
JUNE 2003
1. BW3 and BW4 are not applicable for the IDT71V2578.
1
©2003IntegratedDeviceTechnology,Inc.
DSC-4876/09