是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | LCC | 包装说明: | QCCJ, LDCC68,1.0SQ |
针数: | 68 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.41 |
风险等级: | 5.08 | 最长访问时间: | 55 ns |
其他特性: | LOW POWER STANDBY; BATTERY BACK UP | I/O 类型: | COMMON |
JESD-30 代码: | S-PQCC-J68 | JESD-609代码: | e0 |
长度: | 24.2062 mm | 内存密度: | 32768 bit |
内存集成电路类型: | DUAL-PORT SRAM | 内存宽度: | 16 |
湿度敏感等级: | 1 | 功能数量: | 1 |
端口数量: | 2 | 端子数量: | 68 |
字数: | 2048 words | 字数代码: | 2000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 2KX16 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | QCCJ | 封装等效代码: | LDCC68,1.0SQ |
封装形状: | SQUARE | 封装形式: | CHIP CARRIER |
并行/串行: | PARALLEL | 电源: | 5 V |
认证状态: | Not Qualified | 座面最大高度: | 4.57 mm |
最大待机电流: | 0.004 A | 最小待机电流: | 2 V |
子类别: | SRAMs | 最大压摆率: | 0.315 mA |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Tin/Lead (Sn85Pb15) | 端子形式: | J BEND |
端子节距: | 1.27 mm | 端子位置: | QUAD |
宽度: | 24.2062 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IDT7143SA55PF | IDT |
获取价格 |
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS | |
IDT7143SA55PF9 | IDT |
获取价格 |
Dual-Port SRAM, 2KX16, 55ns, CMOS, PQFP100, TQFP-100 | |
IDT7143SA55PFB | IDT |
获取价格 |
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS | |
IDT7143SA55PFGI | IDT |
获取价格 |
Dual-Port SRAM, 2KX16, 55ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, GREEN, TQFP-100 | |
IDT7143SA55PFI | IDT |
获取价格 |
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS | |
IDT7143SA55PG | IDT |
获取价格 |
Multi-Port SRAM, 2KX16, 55ns, CMOS, PPGA68, PLASTIC, PGA-68 | |
IDT7143SA55PN | ETC |
获取价格 |
x16 Dual-Port SRAM | |
IDT7143SA70F | IDT |
获取价格 |
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS | |
IDT7143SA70FB | IDT |
获取价格 |
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS | |
IDT7143SA70FI | IDT |
获取价格 |
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS |