5秒后页面跳转
IDT6167SA85Y PDF预览

IDT6167SA85Y

更新时间: 2024-10-01 22:57:15
品牌 Logo 应用领域
艾迪悌 - IDT /
页数 文件大小 规格书
8页 67K
描述
CMOS STATIC RAM 16K (16K x 1-BIT)

IDT6167SA85Y 数据手册

 浏览型号IDT6167SA85Y的Datasheet PDF文件第2页浏览型号IDT6167SA85Y的Datasheet PDF文件第3页浏览型号IDT6167SA85Y的Datasheet PDF文件第4页浏览型号IDT6167SA85Y的Datasheet PDF文件第5页浏览型号IDT6167SA85Y的Datasheet PDF文件第6页浏览型号IDT6167SA85Y的Datasheet PDF文件第7页 
IDT6167SA  
IDT6167LA  
CMOS STATIC RAM  
16K (16K x 1-BIT)  
Integrated Device Technology, Inc.  
Access times as fast as 15ns are available. The circuit also  
offers a reduced power standby mode. When CSgoes HIGH,  
the circuit will automatically go to, and remain in, a standby  
mode as long as CS remains HIGH. This capability provides  
significant system-level power and cooling savings. The low-  
power (LA) version also offers a battery backup data retention  
capability where the circuit typically consumes only 1µW  
operating off a 2V battery.  
FEATURES:  
• High-speed (equal access and cycle time)  
— Military: 15/20/25/35/45/55/70/85/100ns (max.)  
— Commercial: 15/20/25/35ns (max.)  
• Low power consumption  
• Battery backup operation — 2V data retention voltage  
(IDT6167LA only)  
• Available in 20-pin CERDIP and Plastic DIP, and 20-pin  
SOJ  
• Produced with advanced CMOS high-performance  
technology  
All inputs and the output of the IDT6167 are TTL-compat-  
ible and operate from a single 5V supply, thus simplifying  
system designs.  
TheIDT6167ispackagedinaspace-saving20-pin, 300mil  
Plastic DIP or CERDIP, Plastic 20-pin SOJ, providing high  
board-level packing densities.  
Military grade product is manufactured in compliance with  
the latest revision of MIL-STD-883, Class B, making it ideally  
suited to military temperature applications demanding the  
highest level of performance and reliability.  
• CMOS process virtually eliminates alpha particle soft-  
error rates  
• Separate data input and output  
• Military product compliant to MIL-STD-883, Class B  
DESCRIPTION:  
The lDT6167 is a 16,384-bit high-speed static RAM orga-  
nized as 16K x 1. The part is fabricated using IDT’s high-  
performance, high reliability CMOS technology.  
FUNCTIONAL BLOCK DIAGRAM  
A0  
VCC  
GND  
16,384-BIT  
MEMORY ARRAY  
ADDRESS  
DECODE  
A13  
DIN  
DOUT  
I/O CONTROL  
CS  
CONTROL  
LOGIC  
WE  
2981 drw 01  
The IDT logo is a registered trademark of Integrated Device Technology, Inc.  
MILITARY AND COMMERCIAL TEMPERATURE RANGES  
MARCH 1996  
1996 Integrated Device Technology, Inc.  
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.  
2981/5  
5.2  
1

与IDT6167SA85Y相关器件

型号 品牌 获取价格 描述 数据表
IDT6167SA85YB IDT

获取价格

CMOS STATIC RAM 16K (16K x 1-BIT)
IDT6167SAE IDT

获取价格

Standard SRAM, 16KX1, CMOS
IDT6167SAF IDT

获取价格

Standard SRAM, 16KX1, CMOS
IDT6167SART IDT

获取价格

Standard SRAM, 16KX1, CMOS
IDT6168 IDT

获取价格

CMOS STATIC RAM 16K (4K x 4-BIT)
IDT6168L100DB IDT

获取价格

Standard SRAM, 4KX4, 100ns, CMOS, CDIP20
IDT6168L100DC IDT

获取价格

Standard SRAM, 4KX4, 100ns, CMOS, CDIP20
IDT6168L100DI IDT

获取价格

Standard SRAM, 4KX4, 100ns, CMOS, CDIP20
IDT6168L100LI IDT

获取价格

Standard SRAM, 4KX4, 100ns, CMOS, CQCC20
IDT6168LA IDT

获取价格

CMOS STATIC RAM 16K (4K x 4-BIT)