Datasheet > ID25S33E6UX00

ID25S33E6UX00

更新时间： 2024-11-21 20:45:35

品牌	Logo	应用领域
安费诺 - AMPHENOL		连接器
页数	文件大小	规格书
1页	93K
描述
D Subminiature Connector, 25 Contact(s), Female, Solder Terminal

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ID25S33E6UX00 数据手册

PCB DRILLING DETAILS

ORDERING INFORMATION

TECHNICAL SPECIFICATIONS

MATERIAL

SHELL

STEEL TIN/Zinc Cr 3 PLATED.

INSULATORS

SELF EXTINGUISHING BLACK POLYESTER UL CLASS 94V0

SERIES

THE HOUSING WILL WITHSTAND EXPOSURE TO 260−265°C

IF WE USE PROTECTIVE ADHESIVE (type Kapton or Teflon)

OR PROTECTIVE METALLIC DEVICE

LEAD FREE

NO.OF CONTACTS

09,15,25 & 37

SPECIAL CODE

00−>STANDARD

CONTACTS

COPPER ALLOY

TYPE OF CONTACTS

S−SOCKET

PLATING

MOUNTING OPTIONS

ACTIVE ZONE

GOLD OVER NICKEL

TYPE OF TERMINATION

33−ANGLED SPILL

UL−>INSERT M3+METAL BRACKET

TERMINATION ZONE

FOR LEAD FREE PLATING

TIN LEAD OVER NICKEL

UX−>INSERT UNC 4 40+METAL BRACKET

MIN.MATTE TIN TOP OVER

PITCH 2.84 USA

PLATING

4−>FLASH Au+Sn/SnPb

6−>0.76 mAu+Sn/SnPb

1.27mMIN.NICKEL UNDER PLATE(ON TERMINATION ZONE)

BRASS,TIN/Zinc Cr 3 PLATED.

FOOT PRINT 8.08 USA

METAL BRACKET

CLINCH NUT

HEIGHT OF TERMINATION

E−3.18 US STANDARD

BRASS,TIN/Zinc Cr 3 PLATED.

ELECTRICAL DATA

"This LF product meets European Union Directives and other country

regulations as described in GS−22−008"

MAX.CURRENT RATING

TEST VOLTAGE

1000V

RATED VOLTAGE

300V

The housing will withstand exposure to 260°C peak temperature for 3.5 seconds

in a wave solder application with a 1.6mm minimum thick circuit board.

Packaging as per GS−14−920

CONTACT RESISTANCE

< 25mW

< 5m

SHELL RESISTANCE

> 5000MW

INSULATION RESISTANCE

ENVIRONMENTAL CHARACTERISTICS.

DELTA-D

OPERATING TEMPERATURE RANGE

−55°C +125°C

MECHANICAL CHARACTERISTICS

GVJ 2006/ 06/ 08

I06-0074

.00±0.1

MATING/UNMATING CYCLES (MIN)

200 (FLASH Au); 500 (0.76µ Au)

5 N Max./ 0.3 N Min.

0°±1°

.000±.00X

INSERTION/EXTRACTION FORCE PER CONTACT

1998/ 12/ 16

GEORGE.V.JOSEPH

C-DD-0030

GEORGE.V.JOSEPH 2006/ 06/ 22

2006/ 06/ 22

K_V_SIVADAS

PDM: Rev:D

STATUS:Released

Printed: Jan 18, 2011.

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