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ICE30N60W PDF预览

ICE30N60W

更新时间: 2024-11-28 12:31:47
品牌 Logo 应用领域
ICEMOS /
页数 文件大小 规格书
8页 589K
描述
N-Channel Enhancement Mode MOSFET

ICE30N60W 数据手册

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Preliminary Data Sheet  
ICE30N60W  
Product Summary  
ICE30N60W N-Channel  
Enhancement Mode MOSFET  
ID  
V(BR)DSS ID=250uA  
TA=25oC  
30A  
Max  
Min  
Typ  
Typ  
600V  
rDS(on)  
Qg  
VGS=10V 0.075Ω  
VDS=480V 187nC  
HFALROEGEEN  
Features  
• TO247 package  
• Low rDS(on)  
D
• Ultra Low Gate Charge  
• High dv/dt capability  
• High Unclamped Inductive Switching (UIS) capability  
• High peak current capability  
• Increased transconductance performance  
• Optimized design for high performance power systems  
G
S
TO247  
1:G, 2:D,  
3:S, 4:D,  
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS  
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20  
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN  
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.  
(TO-247)  
, at Tj=25oC, unless otherwise specified  
Maximum ratings b  
Parameter  
Symbol  
Conditions  
Value  
30  
Unit  
A
Tc=25oC  
Continuous drain current  
ID  
ID, pulse  
E AS  
I AR  
Pulsed drain current  
Tc=25oC  
103  
1100  
18  
A
ID=18A  
Avalanche energy, single pulse  
Avalanche current, repetitive  
mJ  
A
limited by Tjmax  
VDS=480V, ID=30A,  
Tj=125oC  
V/ns  
V
MOSFET dv/dt ruggedness  
dv/dt  
50  
Static  
20  
30  
±
±
Gate source voltage  
VGS  
AC (f>1Hz)  
Tc=25oC  
W
oC  
Power dissipation  
Ptot  
313  
-55 to +150  
60  
Operating and storage temperature  
Mounting torque  
Tj, Tstg  
Ncm  
M 3 & 3.5 screws  
a When mounted on 1inch square 2oz copper clad FR-4  
b Preliminary Data Sheet Specifications subject to change  
SP-30N60W-000-2  
05/15/2013  
1

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