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IBM041812PQKB-9 PDF预览

IBM041812PQKB-9

更新时间: 2024-01-26 02:32:32
品牌 Logo 应用领域
国际商业机器公司 - IBM 静态存储器内存集成电路
页数 文件大小 规格书
14页 218K
描述
Standard SRAM, 64KX18, 9ns, CMOS, PQFP100, TQFP-100

IBM041812PQKB-9 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:QFP包装说明:LQFP, QFP100,.63X.87
针数:100Reach Compliance Code:unknown
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.89最长访问时间:9 ns
I/O 类型:COMMONJESD-30 代码:R-PQFP-G100
JESD-609代码:e0长度:20 mm
内存密度:1179648 bit内存集成电路类型:STANDARD SRAM
内存宽度:18功能数量:1
端子数量:100字数:65536 words
字数代码:64000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:64KX18输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:LQFP
封装等效代码:QFP100,.63X.87封装形状:RECTANGULAR
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3.3 V
认证状态:Not Qualified座面最大高度:1.6 mm
最大待机电流:0.025 A最小待机电流:3.14 V
子类别:SRAMs最大压摆率:0.3 mA
最大供电电压 (Vsup):3.465 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.65 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:14 mm
Base Number Matches:1

IBM041812PQKB-9 数据手册

 浏览型号IBM041812PQKB-9的Datasheet PDF文件第2页浏览型号IBM041812PQKB-9的Datasheet PDF文件第3页浏览型号IBM041812PQKB-9的Datasheet PDF文件第4页浏览型号IBM041812PQKB-9的Datasheet PDF文件第6页浏览型号IBM041812PQKB-9的Datasheet PDF文件第7页浏览型号IBM041812PQKB-9的Datasheet PDF文件第8页 
IBM041812PQKB  
Preliminary  
64K X 18 BURST SRAM  
Write Enable Truth Table  
WEa  
WEb  
Byte Written  
Notes  
H
L
H
L
Read All Bytes  
Write All Bytes  
Write Byte A (DIN 0 - 8)  
Write Byte B (DIN 9 - 17)  
L
H
L
H
Absolute Maximum Ratings  
Parameter  
Power Supply Voltage  
Input Voltage  
Symbol  
VDD  
Rating  
-0.5 to 4.6  
-0.5 to 6.0  
-0.5 to VDD+0.5  
0 to +70  
-55 to +125  
2.0  
Units  
V
Notes  
1
1
1
1
1
1
1
VIN  
V
VOUT  
TOPR  
TSTG  
PD  
Output Voltage  
V
°C  
°C  
W
Operating Temperature  
Storage Temperature  
Power Dissipation  
IOUT  
Short Circuit Output Current  
50  
mA  
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a  
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational  
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-  
ability.  
Recommended DC Operating Conditions (T =0 to 70°C)  
A
Parameter  
Supply Voltage  
Symbol  
VDD  
Min.  
3.135  
2.2  
Typ.  
3.3  
Max.  
3.465  
5.5  
Units  
V
Notes  
1, 4  
VIH  
Input High Voltage  
Input Low Voltage  
Output Current  
V
1, 2, 4  
1, 3, 4  
4
VIL  
-0.3  
0.8  
V
IOUT  
5
8
mA  
1. All voltages referenced to VSS. All VDD and VSS pins must be connected.  
2. VIH(Max)DC = 5.5 V, VIH(Max)AC = 6.0 V (pulse width 4.0ns).  
3. VIL(Min)DC = - 0.3 V, VIL(Min)AC= -1.5 V (pulse width 4.0ns).  
4. Input Voltage levels are tested to the following DC conditions: 1 microsecond cycle and 200 nanosecond set-up and hold times.  
Capacitance (T =0 to +70°C, V =3.3V ± 5%, f=1MHz)  
A
DD  
Parameter  
Symbol  
CIN  
Test Condition  
VIN = 0V  
Max  
5
Units  
pF  
Notes  
Input Capacitance  
COUT  
VOUT = 0V  
Data I/O Capacitance (DQ0-DQ17)  
5
pF  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
26H4672  
SA14-4663-01  
Revised 9/97  
Page 5 of 14  
 
 
 

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