生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | DIP, | 针数: | 28 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.84 |
最长访问时间: | 100 ns | JESD-30 代码: | R-PDIP-T28 |
长度: | 37 mm | 内存密度: | 262144 bit |
内存集成电路类型: | STANDARD SRAM | 内存宽度: | 8 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 28 | 字数: | 32768 words |
字数代码: | 32000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 32KX8 | 输出特性: | 3-STATE |
可输出: | YES | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | DIP | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 并行/串行: | PARALLEL |
认证状态: | Not Qualified | 座面最大高度: | 4.826 mm |
最小待机电流: | 2 V | 最大供电电压 (Vsup): | 3.3 V |
最小供电电压 (Vsup): | 2.7 V | 标称供电电压 (Vsup): | 3 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
宽度: | 15.24 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HY62U256BLP-12I | HYNIX |
获取价格 |
Standard SRAM, 32KX8, 120ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28 |
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HY62U256BLR1-10 | HYNIX |
获取价格 |
Standard SRAM, 32KX8, 100ns, CMOS, PDSO28, 8 X 13.40 MM, REVERSE, TSOP1-28 |
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HY62U256BLR1-10I | HYNIX |
获取价格 |
Standard SRAM, 32KX8, 100ns, CMOS, PDSO28, 8 X 13.40 MM, REVERSE, TSOP1-28 |
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HY62U256BLR1-12 | HYNIX |
获取价格 |
Standard SRAM, 32KX8, 120ns, CMOS, PDSO28, 8 X 13.40 MM, REVERSE, TSOP1-28 |
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HY62U256BLR1-15I | HYNIX |
获取价格 |
Standard SRAM, 32KX8, 150ns, CMOS, PDSO28, 8 X 13.40 MM, REVERSE, TSOP1-28 |
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HY62U256BLT1-10I | HYNIX |
获取价格 |
Standard SRAM, 32KX8, 100ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28 |
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HY62U256BLT1-12 | HYNIX |
获取价格 |
Standard SRAM, 32KX8, 120ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28 |
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HY62U256BLT1-12I | HYNIX |
获取价格 |
Standard SRAM, 32KX8, 120ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28 |
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HY62U256BLT1-15 | HYNIX |
获取价格 |
Standard SRAM, 32KX8, 150ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28 |
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HY62U256BLT1-15I | HYNIX |
获取价格 |
Standard SRAM, 32KX8, 150ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28 |
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