5秒后页面跳转
HY62U8100ALLR1-10 PDF预览

HY62U8100ALLR1-10

更新时间: 2023-01-03 08:34:45
品牌 Logo 应用领域
海力士 - HYNIX 静态存储器光电二极管
页数 文件大小 规格书
11页 167K
描述
Standard SRAM, 128KX8, 100ns, CMOS, PDSO32, 8 X 20 MM, REVERSE, TSOP1-32

HY62U8100ALLR1-10 数据手册

 浏览型号HY62U8100ALLR1-10的Datasheet PDF文件第2页浏览型号HY62U8100ALLR1-10的Datasheet PDF文件第3页浏览型号HY62U8100ALLR1-10的Datasheet PDF文件第4页浏览型号HY62U8100ALLR1-10的Datasheet PDF文件第5页浏览型号HY62U8100ALLR1-10的Datasheet PDF文件第6页浏览型号HY62U8100ALLR1-10的Datasheet PDF文件第7页 
HY62V8100A-(I)/HY62U8100A-(I) Series  
128Kx8bit CMOS SRAM  
DESCRIPTION  
FEATURES  
The HY62V8100A-(I)/HY62U8100A-(I) is a high  
speed, low power and 1M bit CMOS SRAM  
organized as 131,072 words by 8bit. The  
HY62V8100A-(I) / HY62U8100A-(I) uses high  
performance CMOS process technology and  
designed for high speed low power circuit  
technology. It is particulary well suited for used in  
high density low power system application. This  
device has a data retention mode that guarantees  
data to remain valid at a minimum power supply  
voltage of 2.0V.  
·
·
·
Fully static operation and Tri-state output  
TTL compatible inputs and outputs  
Battery backup(L/LL-part)  
- 2.0V(min) data retention  
Standard pin configuration  
·
- 32pin 8x20mm/ 8x13.4mm Small TSOP-I  
(Standard and Reversed)  
Product  
No.  
HY62V8100A  
HY62V8100A-I  
HY62U8100A  
HY62U8100A-I  
Voltage  
(V)  
Speed  
(ns)  
85/100/120  
85/100/120  
100/120/150  
100/120/150  
Operation  
Current(mA)  
Standby Current(uA)  
Temperature  
(°C)  
0~70(Normal)  
-40~85(E.T.)  
0~70(Normal)  
-40~85(E.T.)  
L
LL  
10  
20  
10  
15  
3.3  
3.3  
3.0  
3.0  
5
5
5
5
50  
50  
50  
50  
Note 1. E.T. : Extended Temperature, Normal : Normal Temperature  
2. Current value is max.  
PIN CONNECTION  
/OE  
A10  
/CS1  
DQ8  
DQ7  
DQ6  
DQ5  
DQ4  
Vss  
DQ3  
DQ2  
DQ1  
A0  
A3  
A11  
A9  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
A4  
A5  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
1
2
16  
15  
14  
13  
12  
11  
10  
9
A2  
A8  
A6  
A1  
3
A0  
A13  
/WE  
CS2  
A15  
Vcc  
NC  
A16  
A14  
A12  
A7  
A7  
4
A12  
A14  
A16  
NC  
DQ1  
DQ2  
DQ3  
Vss  
DQ4  
DQ5  
DQ6  
DQ7  
DQ8  
/CS1  
A10  
/OE  
5
6
7
8
Vcc  
A15  
CS2  
/WE  
A13  
A8  
9
8
10  
11  
12  
13  
14  
15  
16  
7
6
5
4
A6  
A1  
3
A5  
A2  
A9  
2
A4  
A3  
A11  
1
TSOP-I/Small TSOP-I  
(Standard)  
TSOP-I/Small TSOP-I  
(Reversed)  
PIN DESCRIPTION  
BLOCK DIAGRAM  
ROW DECODER  
I/O1  
A0  
Pin Name  
Pin Function  
/CS1  
Chip Select 1  
Chip Select 2  
Write Enable  
CS2  
/WE  
MEMORY ARRAY  
1024x1024  
/OE  
Output Enable  
Address Input  
Data Input/Output  
Power(3.3V or 3.0V)  
Ground  
A0 ~ A16  
I/O1 ~ I/O8  
Vcc  
A16  
I/O8  
/CS1  
CS2  
/OE  
Vss  
/WE  
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  
Rev.06 /Jan.99  
Hyundai Semiconductor  

与HY62U8100ALLR1-10相关器件

型号 品牌 描述 获取价格 数据表
HY62U8100ALLR1-12I HYNIX Standard SRAM, 128KX8, 120ns, CMOS, PDSO32, 8 X 20 MM, REVERSE, TSOP1-32

获取价格

HY62U8100ALLR1-15 HYNIX Standard SRAM, 128KX8, 150ns, CMOS, PDSO32, 8 X 20 MM, REVERSE, TSOP1-32

获取价格

HY62U8100ALLR1-15I HYNIX Standard SRAM, 128KX8, 150ns, CMOS, PDSO32, 8 X 20 MM, REVERSE, TSOP1-32

获取价格

HY62U8100ALLR1-I-10 HYNIX Standard SRAM, 128KX8, 100ns, CMOS, PDSO32, 8 X 20 MM, REVERSE, TSOP1-32

获取价格

HY62U8100ALLR1-I-15 HYNIX Standard SRAM, 128KX8, 150ns, CMOS, PDSO32, 8 X 20 MM, REVERSE, TSOP1-32

获取价格

HY62U8100ALLSR-10I HYNIX Standard SRAM, 128KX8, 100ns, CMOS, PDSO32, 8 X 13.40 MM, REVERSE, TSOP1-32

获取价格