Datasheet > HY62SF16404E-I

HY62SF16404E-I

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
海力士 - HYNIX		静态存储器
页数	文件大小	规格书
10页	182K
描述
256K x16 bit 1.65 ~ 2.3V Super Low Power FCMOS Slow SRAM

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HY62SF16404E-I 数据手册

HY62SF16404E Series

256Kx16bit full CMOS SRAM

Document Title

256K x16 bit 1.65 ~ 2.3V Super Low Power FCMOS Slow SRAM

Revision History

Revision No History

Draft Date

Remark

Initial Draft

Dec.20.2001

Mar.05.2002

May.17.2002

Preliminary

Package Height Changed 1.0mm -> 0.9mm

ISB1 Changed 6uA -> 10uA

VOH Changed 1.6V -> 1.4V

Icc Changed 0.5mA -> 1.0mA

This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility

for use of circuits described. No patent licenses are implied.

Rev.02 / May.02

Hynix Semiconductor

12 3 4 5 6 7...10

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型号	品牌	描述	获取价格	数据表
HY62SF16404E-SF	HYNIX	256K x16 bit 1.65 ~ 2.3V Super Low Power FCMOS Slow SRAM	获取价格
HY62SF16404E-SF70I	HYNIX	Standard SRAM, 256KX16, 70ns, CMOS, PBGA48, FBGA-48	获取价格
HY62SF16404E-SFI	HYNIX	256K x16 bit 1.65 ~ 2.3V Super Low Power FCMOS Slow SRAM	获取价格
HY62SF16406C	HYNIX	256Kx16bit full CMOS SRAM	获取价格
HY62SF16406C-DM85I	HYNIX	256Kx16bit full CMOS SRAM	获取价格
HY62SF16406C-I	HYNIX	256Kx16bit full CMOS SRAM	获取价格