Datasheet > HY628400ALLR2

HY628400ALLR2

更新时间： 2022-11-25 11:07:24

品牌	Logo	应用领域
海力士 - HYNIX		静态存储器
页数	文件大小	规格书
11页	182K
描述
512K x8 bit 5.0V Low Power CMOS slow SRAM

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HY628400ALLR2 数据手册

HY628400A Series

512Kx8bit CMOS SRAM

Document Title

512K x8 bit 5.0V Low Power CMOS slow SRAM

Revision History

Revision No History

Draft Date

Remark

Final

Revision History Insert

Jul.06.2000

Revised

Aug.04.2000

Dec.04.2000

Final

- Change Iccdr Value : 15uA => 20uA

Marking Information Add

Revised

E.T (-25~85°C), I.T (-40~85°C) Part Insert

AC Test Condition Add : 5pF Test Load

Changed Logo

Apr.30.2001

Final

HYUNDAI -> hynix

Marking Information Change

This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility

for use of circuits described. No patent licenses are implied.

Rev 07 / Apr. 2001

Hynix Semiconductor

12 3 4 5 6 7...11

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型号	品牌	描述	获取价格	数据表
HY628400ALLR2-55	ETC	x8 SRAM	获取价格
HY628400ALLR2-70	ETC	x8 SRAM	获取价格
HY628400ALLR2-70E	HYNIX	Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 0.400 INCH, REVERSE, TSOP2-32	获取价格
HY628400ALLR2-85	ETC	x8 SRAM	获取价格
HY628400ALLR2-E	HYNIX	512K x8 bit 5.0V Low Power CMOS slow SRAM	获取价格
HY628400ALLR2-I	HYNIX	512K x8 bit 5.0V Low Power CMOS slow SRAM	获取价格