Datasheet > HY62256AJ-I

HY62256AJ-I

更新时间： 2022-11-26 02:53:32

品牌	Logo	应用领域
海力士 - HYNIX		静态存储器
页数	文件大小	规格书
14页	822K
描述
32Kx8bit CMOS SRAM

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数据手册

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HY62256AJ-I 数据手册

-sram/62256ala1

http://www.hea.com/hean2/sram/62256ala1.htm

TRUTH TABLE

/CS /WE

/OE

MODE

I/O OPERATION

Standby

High-Z

Output Disabled

Read

High-Z

Data Out

Data In

Write

Note:

1. H=VIH, L=VIL, X=Don't Care

DC CHARACTERISTICS

Vcc = 5V ?% TA = 0°C to 70°C (Normal) / -40°C to 85°C (E.T.) unless otherwise

specified

Symbol

Parameter

Test Condition

Min Typ Max Unit

ILI

Input Leakage Current

Vss <= VIN <= Vcc -1

Vss <= VOUT <= Vcc

/CS=VIH or

-1

ILO

Output Leakage Current

/OE=VIH or /WE =

VIL

/CS= VIL,

VIN=VIH or VIL, II/O= -

0mA

Operating Power Supply

Current

Icc

30 50

40 70

/CS = VIL

Min. Duty Cycle =

100%, II/O =0mA

Average Operating

Current

Icc1

TTL Standby Current

(TTL Inputs)

/CS = VIH VIN = VIH

or VIL

ISB

0.4

CMOS

Standby

/CS >= Vcc-

0.2V

HY62256A

100 uA

ISB1

Current

(CMOS

VIN <= 0.2V or LL -

VIN >=

Input)

VCC-0.2V

HY62256A-I

100 uA

VOL

VOH

Output Low Voltage

Output High Voltage

IOL= 2.1 mA

IOH = 1mA

0.4

2.4

Note: Typical values are at Vcc = 5.0V TA = 25°C

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