Datasheet > HY62256ALLJ

HY62256ALLJ

更新时间： 2022-11-25 11:07:24

品牌	Logo	应用领域
海力士 - HYNIX		静态存储器
页数	文件大小	规格书
14页	822K
描述
32Kx8bit CMOS SRAM

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数据手册

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HY62256ALLJ 数据手册

Data Sheet-sram/62256ald1

http://www.hea.com/hean2/sram/62256ald1.htm

HY62256A-(I) Series

32Kx8bit CMOS SRAM

Description

Features

The

Fully static operation and

Tri-state outputs

HY62256A/HY62256A-I

is a high-speed, low

power and 32,786 x 8-bits

CMOS Static Random

Access Memory

TTL compatible inputs

and outputs

Low power consumption

-2.0V(min.) data

retention

fabricated using

Hyundai's high

Standard pin

configuration

-28 pin 600 mil PDIP

-28 pin 330 mil SOP

-28 pin 8x13.4 mm

TSOP-1

performance CMOS

process technology. The

HY62256A/HY62256A-I

has a data retention mode

that guarantees data to

remain valid at the

(standard and reversed)

minimum power supply

voltage of 2.0 volt. Using

the CMOS technology,

supply voltages from 2.0

to 5.5 volt has little effect

on supply current in the

data retention mode. The

HY62256A/HY62256A-I

is suitable for use in low

voltage operation and

battery back-up

application.

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与HY62256ALLJ相关器件

型号	品牌	描述	获取价格	数据表
HY62256ALLJ-10	HYNIX	Standard SRAM, 32KX8, 100ns, CMOS, PDSO28, 0.330 INCH, SOP-28	获取价格
HY62256ALLJ-12	ETC	x8 SRAM	获取价格
HY62256ALLJ-120	HYNIX	Standard SRAM, 32KX8, 120ns, CMOS, PDSO28, 0.330 INCH, SOP-28	获取价格
HY62256ALLJ-55	ETC	x8 SRAM	获取价格
HY62256ALLJ-55I	HYNIX	Standard SRAM, 32KX8, 55ns, CMOS	获取价格
HY62256ALLJ-70	ETC	x8 SRAM	获取价格