Datasheet > HY62256AJ-I

HY62256AJ-I

更新时间： 2022-11-26 02:53:32

品牌	Logo	应用领域
海力士 - HYNIX		静态存储器
页数	文件大小	规格书
14页	822K
描述
32Kx8bit CMOS SRAM

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HY62256AJ-I 数据手册

-sram/62256ala1

http://www.hea.com/hean2/sram/62256ala1.htm

HYUNDAI ELECTRONICS AMERICA

HY62256A-(I) Series

RATINGS INFORMATION

32Kx8bit CMOS SRAM

ABSOLUTE MAXIMUM RATING (1)

Symbol

Parameter

Rating

Unit

Remark

VCC VIN

VOUT

Power Supply Input/Output

Voltage

-0.5 to 7.0 V

0 to 70

°C

HY62256A

HY62256A-I

Operating Temperature

-40 to 85 °C

-65 to 150 °C

TSTG

Storage Temperature

Power Dissipation

Data OutPut Current

1.0

IOUT

Lead Soldering Temperature

& Time

TSOLDER

260 /10

°C / sec

Note

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS

may cause permanent damage to the device. This is stress rating only and the

functional operation of the device under these or any other conditions above

those indicated in the operation of this specification is not implied. Exposure to

the absolute maximum rating conditions for extended period may affect

reliability.

RECOMMENDED DC OPERATING CONDITIONS

TA=0°C to 70°C / TA= -40°C to 85°C (E.T.)

Symbol

Parameter

Power Supply Voltage

Input High Voltage

Input Low Voltage

Min

4.5

Typ

5.0

Max

Unit

VCC

5.5

VIH

2.2

VCC+0.5

0.8

VIL

-0.5(1)

Note

1. VIL = -3.0V for pulse width less than 30ns

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22/10/97 12:33

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