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HY5W2A6CF-S PDF预览

HY5W2A6CF-S

更新时间: 2024-02-13 09:09:01
品牌 Logo 应用领域
海力士 - HYNIX 时钟动态存储器内存集成电路
页数 文件大小 规格书
24页 407K
描述
Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, 8.30 X 10.50 MM, 0.80 MM PITCH, FBGA-54

HY5W2A6CF-S 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA, BGA54,9X9,32针数:54
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.84
访问模式:FOUR BANK PAGE BURST最长访问时间:7 ns
其他特性:AUTO/SELF REFRESH最大时钟频率 (fCLK):100 MHz
I/O 类型:COMMON交错的突发长度:1,2,4,8
JESD-30 代码:R-PBGA-B54JESD-609代码:e1
长度:10.5 mm内存密度:134217728 bit
内存集成电路类型:SYNCHRONOUS DRAM内存宽度:16
功能数量:1端口数量:1
端子数量:54字数:8388608 words
字数代码:8000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-25 °C
组织:8MX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA54,9X9,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH电源:1.8/2.5,2.5 V
认证状态:Not Qualified刷新周期:4096
座面最大高度:1.07 mm自我刷新:YES
连续突发长度:1,2,4,8,FP最大待机电流:0.0005 A
子类别:DRAMs最大压摆率:0.125 mA
最大供电电压 (Vsup):2.7 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子面层:TIN SILVER COPPER端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
宽度:8.3 mmBase Number Matches:1

HY5W2A6CF-S 数据手册

 浏览型号HY5W2A6CF-S的Datasheet PDF文件第3页浏览型号HY5W2A6CF-S的Datasheet PDF文件第4页浏览型号HY5W2A6CF-S的Datasheet PDF文件第5页浏览型号HY5W2A6CF-S的Datasheet PDF文件第7页浏览型号HY5W2A6CF-S的Datasheet PDF文件第8页浏览型号HY5W2A6CF-S的Datasheet PDF文件第9页 
HY5W2A6C(L/S)F / HY57W2A1620HC(L/S)T  
HY5W26CF / HY57W281620HCT  
BASIC FUNCTIONAL DESCRIPTION (Continued)  
Extended Mode Register  
BA1  
1
A12 A11  
A0  
BA0  
0
A10 A9  
A8  
0
A7  
0
A6  
0
A5  
0
A4  
A3  
A2  
A1  
0
0
0
0
TCSR  
PASR  
TCSR (Temperature Compensated Self Refresh)  
o
A4 A3  
Temperature  
C
0
0
1
1
0
1
0
1
70  
45  
15  
85  
PASR (Partial Array Self Refresh)  
A2 A1 A0  
Self Refresh Coverage  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
All Banks  
Half of Total Bank (BA1=0)  
Quarter of Total Bank (BA1=BA0=0)  
Reserved  
Reserved  
One Eighth of Total Bank (Row Address MSB=0)  
One Sixteenth of Total Bank (Row Address 2 MSBs=0)  
Reserved  
Rev. 1.3 / Dec. 01  
7

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