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HY5W2A2(L/S)F PDF预览

HY5W2A2(L/S)F

更新时间: 2024-01-10 21:17:02
品牌 Logo 应用领域
其他 - ETC 动态存储器
页数 文件大小 规格书
25页 372K
描述
4Mx32|2.5V|4K|H|Handy SDRAM - 128M

HY5W2A2(L/S)F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA, BGA90,9X15,32针数:90
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.84
访问模式:FOUR BANK PAGE BURST最长访问时间:7 ns
其他特性:AUTO/SELF REFRESH最大时钟频率 (fCLK):100 MHz
I/O 类型:COMMON交错的突发长度:1,2,4,8
JESD-30 代码:R-PBGA-B90JESD-609代码:e1
长度:13 mm内存密度:134217728 bit
内存集成电路类型:SYNCHRONOUS DRAM内存宽度:32
功能数量:1端口数量:1
端子数量:90字数:4194304 words
字数代码:4000000工作模式:SYNCHRONOUS
最高工作温度:80 °C最低工作温度:-10 °C
组织:4MX32输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA90,9X15,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH峰值回流温度(摄氏度):260
电源:1.8/2.5,2.5 V认证状态:Not Qualified
刷新周期:4096座面最大高度:1.2 mm
自我刷新:YES连续突发长度:1,2,4,8,FP
最大待机电流:0.0006 A子类别:DRAMs
最大压摆率:0.13 mA最大供电电压 (Vsup):2.7 V
最小供电电压 (Vsup):2.3 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL EXTENDED端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:20
宽度:8 mmBase Number Matches:1

HY5W2A2(L/S)F 数据手册

 浏览型号HY5W2A2(L/S)F的Datasheet PDF文件第3页浏览型号HY5W2A2(L/S)F的Datasheet PDF文件第4页浏览型号HY5W2A2(L/S)F的Datasheet PDF文件第5页浏览型号HY5W2A2(L/S)F的Datasheet PDF文件第7页浏览型号HY5W2A2(L/S)F的Datasheet PDF文件第8页浏览型号HY5W2A2(L/S)F的Datasheet PDF文件第9页 
HY5W2A2(L/S)F / HY57W2A3220(L/S)T  
HY5W22F / HY57W283220T  
4Banks x 1M x 32bits Synchronous DRAM  
BASIC FUNCTIONAL DESCRIPTION (Continued)  
Extended Mode Register  
BA1  
1
A11  
0
A0  
BA0  
0
A10 A9  
A8  
0
A7  
0
A6  
0
A5  
0
A4  
A3  
A2  
A1  
0
0
TCSR  
PASR  
TCSR (Temperature Compensated Self Refresh)  
o
A4 A3  
Temperature  
C
0
0
1
1
0
1
0
1
70  
45  
15  
85  
PASR (Partial Array Self Refresh)  
A2 A1 A0  
Self Refresh Coverage  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
All Banks  
Half of Total Bank (BA1=0)  
Quarter of Total Bank (BA1=BA0=0)  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume  
any responsibility for use of circuits described. No patent licenses are implied.  
Rev. 0.4/Oct. 02  

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