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HY5V56DLF-P

更新时间： 2024-01-11 10:07:50
品牌 Logo 应用领域
海力士 - HYNIX 时钟动态存储器内存集成电路
页数 文件大小 规格书
14页 421K
描述
Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54, 13.50 X 8 MM, 0.80 MM PITCH, FBGA-54

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HY5V56DLF-P 技术参数

是否Rohs认证：符合生命周期：Obsolete
零件包装代码：BGA包装说明：FBGA, BGA54,9X9,32
针数：54Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.32.00.24
风险等级：5.84Is Samacsys：N
访问模式：FOUR BANK PAGE BURST最长访问时间：6 ns
其他特性：AUTO/SELF REFRESH最大时钟频率 (fCLK)：100 MHz
I/O 类型：COMMON交错的突发长度：1,2,4,8
JESD-30 代码：R-PBGA-B54JESD-609代码：e1
长度：13.5 mm内存密度：268435456 bit
内存集成电路类型：SYNCHRONOUS DRAM内存宽度：16
功能数量：1端口数量：1
端子数量：54字数：16777216 words
字数代码：16000000工作模式：SYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：16MX16输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：FBGA
封装等效代码：BGA54,9X9,32封装形状：RECTANGULAR
封装形式：GRID ARRAY, FINE PITCH峰值回流温度（摄氏度）：260
电源：3.3 V认证状态：Not Qualified
刷新周期：8192自我刷新：YES
连续突发长度：1,2,4,8,FP最大待机电流：0.001 A
子类别：DRAMs最大压摆率：0.2 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：3 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：Tin/Silver/Copper (Sn/Ag/Cu)端子形式：BALL
端子节距：0.8 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：20宽度：8 mm
Base Number Matches：1

HY5V56DLF-P 数据手册

 浏览型号HY5V56DLF-P的Datasheet PDF文件第5页浏览型号HY5V56DLF-P的Datasheet PDF文件第6页浏览型号HY5V56DLF-P的Datasheet PDF文件第7页浏览型号HY5V56DLF-P的Datasheet PDF文件第9页浏览型号HY5V56DLF-P的Datasheet PDF文件第10页浏览型号HY5V56DLF-P的Datasheet PDF文件第11页 
HY5V56D(L/S)F  
DC CHARACTERISTICS II (TA= 0°C to 70°C, VDD=3.3±0.3V, VSS=0V)  
Speed  
Parameter  
Symbol  
Test Condition  
Unit Note  
-H  
-8  
-P  
-S  
Burst length=1, One bank active  
tRC ≥ tRC(min), IOL=0mA  
Operating Current  
IDD1  
120 120 110 110 mA  
2
1
Precharge Standby  
Current  
in Power Down Mode  
IDD2P  
CKE ≤ VIL(max), tCK = 15ns  
mA  
IDD2PS CKE ≤ VIL(max), tCK = ∞  
CKE ≥ VIH(min), CS ≥ VIH(min), tCK =  
1
15ns  
IDD2N Input signals are changed one time  
during 30ns. All other balls ≥ VDD-0.2V  
or ≤ 0.2V  
15  
Precharge Standby  
Current  
in Non Power Down Mode  
mA  
CKE ≥ VIH(min), tCK = ∞  
IDD2NS  
15  
Input signals are stable.  
IDD3P  
IDD3PS CKE ≤ VIL(max), tCK = ∞  
CKE ≥ VIH(min), CS ≥ VIH(min), tCK =  
CKE ≤ VIL(max), tCK = 15ns  
5
Active Standby Current  
in Power Down Mode  
mA  
5
15ns  
IDD3N Input signals are changed one time  
during 30ns. All other balls ≥ VDD-0.2V  
or ≤ 0.2V  
30  
Active Standby Current  
in Non Power Down Mode  
mA  
CKE ≥ VIH(min), tCK = ∞  
IDD3NS  
20  
Input signals are stable.  
CL=3  
130 130 110 110  
mA  
140 140 120 120  
Burst Mode Operating  
Current  
tCK ≥ tCK(min), IOL=0mA  
All banks active  
IDD4  
1
CL=2  
Auto Refresh Current  
IDD5  
IDD6  
tRRC ≥ tRRC(min), All banks active  
Normal  
220 200 200 200 mA  
2
3
4
5
3
mA  
mA  
uA  
Self Refresh Current  
CKE ≤ 0.2V  
Low Power  
SL Power  
1.5  
900  
Note :  
1. IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open  
2. Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II  
3. HY5V56DF-H/8/P/S  
4. HY5V56DLF-H/8/P/S  
5. HY5V56DSF-H/8/P/S  
Rev. 0.3 / July 2004  
8
1...567891011...14

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HY5V56DLFP-8 HYNIX Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54, 8 X 13.50 MM, 0.80 MM PITCH, LEAD FREE, FBGA-

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HY5V56DLFP-H HYNIX Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 13.50 MM, 0.80 MM PITCH, LEAD FREE, FBG

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HY5V56DLFP-S HYNIX Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54, 8 X 13.50 MM, 0.80 MM PITCH, LEAD FREE, FBGA-

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HY5V56DSF-P HYNIX Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54, 13.50 X 8 MM, 0.80 MM PITCH, FBGA-54

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HY5V56DSFP-8 HYNIX Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54, 8 X 13.50 MM, 0.80 MM PITCH, LEAD FREE, FBGA-

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HY5V56DSFP-H HYNIX Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 13.50 MM, 0.80 MM PITCH, LEAD FREE, FBG

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HY5V56DSFP-S HYNIX Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54, 8 X 13.50 MM, 0.80 MM PITCH, LEAD FREE, FBGA-

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HY5V56FFP-6 HYNIX Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 10 X 8 MM, 0.80 MM PITCH, LEAD FREE, FBGA-5

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HY5V56FFP-6I HYNIX Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, FBGA-5

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HY5V56FFP-H HYNIX Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 10 X 8 MM, 0.80 MM PITCH, LEAD FREE, FBGA-5

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HY5V56FFP-HI HYNIX Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, FBGA-5

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HY5V56FLF-6I HYNIX Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 10 MM, 0.80 MM PITCH, FBGA-54

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HY5V56FLFP-6 HYNIX Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 10 X 8 MM, 0.80 MM PITCH, LEAD FREE, FBGA-5

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HY5V56FLFP-6I HYNIX Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, FBGA-5

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HY5V56FLFP-HI HYNIX Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, FBGA-5

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HY5V58BF ETC 32Mx8|3.3V|8K|H/8/P/S|SDR SDRAM - 256M

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HY5V58BF-P HYNIX Synchronous DRAM, 32MX8, 6ns, CMOS, PBGA54, 8 X 13.50 MM, 0.80 MM PITCH, FBGA-54

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HY5V58BLF ETC 32Mx8|3.3V|8K|H/8/P/S|SDR SDRAM - 256M

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HY5V58BLF-8 HYNIX Synchronous DRAM, 32MX8, 6ns, CMOS, PBGA54, 8 X 13.50 MM, 0.80 MM PITCH, FBGA-54

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HY5V58BLF-H HYNIX Synchronous DRAM, 32MX8, 5.4ns, CMOS, PBGA54, 8 X 13.50 MM, 0.80 MM PITCH, FBGA-54

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