Datasheet > HY5V26FLF-7

HY5V26FLF-7

更新时间： 2023-02-26 14:26:17

品牌	Logo	应用领域
海力士 - HYNIX		动态存储器
页数	文件大小	规格书
12页	157K
描述
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, FBGA-54

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HY5V26FLF-7 数据手册

Synchronous DRAM Memory 128Mbit (8Mx16bit)

HY5V26F(L)F(P)-x(I) Series

ABSOLUTE MAXIMUM RATING

Parameter

Symbol

Rating

Unit

^oC

Note

0 ~ 70^oC

Ambient Temperature

-40 ~ 85^oC

-55 ~ 125

-1.0 ~ 4.6

^oC

Storage Temperature

TSTG

VIN, VOUT

VDD, VDDQ

IOS

Voltage on Any Pin relative to VSS

Voltage on VDD relative to VSS

Short Circuit Output Current

Power Dissipation

^oC / Sec

Soldering Temperature / Time

TSOLDER

260 / 10

Notes:

1. Commercial (0 ~ 70^oC)

2. Industrial (-40 ~ 85^oC)

DC OPERATING CONDITION

Parameter

Power Supply Voltage

Input High Voltage

Input Low Voltage

Symbol

VDD, VDDQ

VIH

Typ

Max

3.6

Unit

Note

Min.

3.0

3.3

3.0

2.0

VDDQ + 0.3

0.8

1, 2

1, 3

VIL

-0.3

Notes:

1. All voltages are referenced to VSS = 0V

2. VIH(max) is acceptable 5.6V AC pulse width with <=3ns of duration.

3. VIL(min) is acceptable -2.0V AC pulse width with <=3ns of duration

AC OPERATING TEST CONDITION (VDD=3.3±0.3V, VSS=0V)

Parameter

Symbol

VIH / VIL

Vtrip

Value

2.4 / 0.4

1.4

Unit

Note

AC Input High / Low Level Voltage

Input Timing Measurement Reference Level Voltage

Input Rise / Fall Time

tR / tF

Voutref

Output Timing Measurement Reference Level Voltage

Output Load Capacitance for Access Time Measurement

1.4

Vtt = 1.4V

Note: 1.

Ω

RT = 50

RT = 500

Ω

Output

Z0 = 50

Ω

50pF

DC Output Load Circuit

AC Output Load Circuit

Rev. 1.0 / June. 2007

1...3 4 567 8 9...12

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