Datasheet > HY12N65FT

HY12N65FT

更新时间： 2024-09-30 12:26:11

品牌	Logo	应用领域
虹扬 - HY		/
页数	文件大小	规格书
4页	134K
描述
650V/ 12A N-Channel Enhancement Mode MOSFET

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数据手册

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HY12N65FT 数据手册

HY12N65T / HY12N65FT

650V / 12A

650V, R_DS(ON)=0.8Ω@V_GS=10V, I_D=6.0A

N-Channel Enhancement Mode MOSFET

Features

• Low ON Resistance

• Fast Switching

• Low Gate Charge & Low C_RSS

• Fully Characterized Avalanche Voltage and Current

• Specially Desigened for AC Adapter, Battery Charger and SMPS

• In compliance with EU RoHs 2002/95/EC Directives

Mechanical Information

ITO-220AB

TO-220AB

• Case: TO-220AB / ITO-220AB Molded Plastic

• Terminals : Solderable per MIL-STD-750,Method 2026

Drain

Marking & Ordering Information

TYPE

MARKING

12N65T

PACKAGE

TO-220AB

ITO-220AB

PACKING

50PCS/TUBE

Gate

HY12N65T

HY12N65FT

Source

12N65FT

Absolute Maximum Ratings (T_C=25^OC unless otherwise noted )

Parameter

Symbol

V_DS

HY12N65T

HY12N65FT Units

Drain-Source Voltage

Gate-Source Voltage

650

+30

V_GS

I_D

T_C=25^OC

Continuous Drain Current

Pulsed Drain Current

I_DM

Maximum Power Dissipation

Derating Factor

175

1.4

P_D

0.42

Avalanche Energy with Single Pulse

E_AS

760

-55 to +150

^OC

I_AS=12A, VDD=90V, L=10.5mΗ

Operating Junction and Storage Temperature Range

T_J,T_STG

Note : 1. Maximum DC current limited by the package

Thermal Characteristics

PARAMETER

Symbol HY12N65T HY12N65FT Units

Junction-to-Case Thermal Resistance

Junction-to Ambient Thermal Resistance

0.7

2.4

^OC/W

θJC

θJA

62.5

100

COMPANYRESERVESTHERIGHTTOIMPROVEPRODUCTDESIGN,FUNCTIONSANDRELIABILITYWITHOUTNOTICE

REV1.0 : AUG. 2011

PAGE . 1

12 3 4

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