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HWC34NC PDF预览

HWC34NC

更新时间: 2024-01-03 12:04:35
品牌 Logo 应用领域
汉威 - HW 晶体晶体管放大器
页数 文件大小 规格书
2页 79K
描述
C-Band Power FET Non-Via Hole Chip

HWC34NC 技术参数

是否Rohs认证: 不符合生命周期:Contact Manufacturer
包装说明:UNCASED CHIP, R-XUUC-N13Reach Compliance Code:unknown
风险等级:5.86Is Samacsys:N
FET 技术:METAL SEMICONDUCTOR最高频带:C BAND
JESD-30 代码:R-XUUC-N13湿度敏感等级:1
端子数量:13工作模式:DEPLETION MODE
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:UNCASED CHIP峰值回流温度(摄氏度):225
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:NO LEAD
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

HWC34NC 数据手册

 浏览型号HWC34NC的Datasheet PDF文件第2页 
HWC34NC  
C-Band Power FET Non-Via Hole Chip  
Autumn 2002 V1  
Features  
Outline Dimensions  
Low Cost GaAs Power FET  
1525.0  
Class A or Class AB Operation  
8.5 dB Typical Gain at 4 GHz  
5V to 10V Operation  
1392.5  
1235.0  
9
1
5
6
7
8
1077.5  
1 0  
Description  
920.0  
762.5  
2
The HWC34NC is a power GaAs FET designed  
for various L-band & S-band applications.  
1 1  
605.0  
3
Absolute Maximum Ratings  
447.5  
290.0  
132.5  
0.0  
1 2  
VDS  
VGS  
ID  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
+15V  
-5V  
4
1 3  
IDSS  
IG  
Gate Current  
6mA  
0.0  
444.5  
TCH  
TSTG  
Channel Temperature  
Storage Temperature  
Power Dissipation  
175 C  
°
75.5  
524.0  
-65 to +175 C  
°
Units: µm  
Thickness: 100 5  
Chip size 50  
*
PT  
12W  
Bond Pads1-4 (Gate): 100 x 100  
Bond Pads5-8 (Drain): 100 x 100  
Bond Pads9-13(Source): 100 x 100  
* mounted on an infinite heat sink  
Electrical Specifications  
(TA=25 C) f = 4 GHz for all RF Tests  
°
Symbol  
Parameters & Conditions  
Saturated Current at VDS=3V, VGS=0V  
Units  
Min.  
Typ.  
Max.  
IDSS  
mA  
V
900  
1200  
1600  
VP  
Pinch-off Voltage at VDS=3V, ID=60mA  
Transconductance at VDS=3V, ID=600mA  
-3.5  
-
-2.0  
700  
33  
-1.5  
mS  
dBm  
dB  
-
-
-
-
g
m
Power Output at Test Points  
VDS=10V, ID=0.5 IDSS  
P1dB  
G1dB  
PAE  
32  
6.5  
25  
Gain at 1dB Compression Point  
VDS=10V, ID=0.5 IDSS  
7.5  
30  
Power-Added Efficiency (POUT = P1dB  
VDS=10V, ID=0.5 IDSS  
)
%
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512  
http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.  

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