HV310

更新时间： 2024-02-22 01:12:57

品牌	Logo	应用领域
超科 - SUPERTEX		控制器
页数	文件大小	规格书
6页	79K
描述
Hotswap, Inrush Current Limiter Controllers

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中文翻译

获取价格

技术参数
数据手册

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HV310 技术参数

是否Rohs认证：	符合	生命周期：	Lifetime Buy
包装说明：	4.90 X 3.90 MM, 1.75 MM HEIGHT, 1.27 MM PITCH, GREEN, MS-012AA, SOIC-8	Reach Compliance Code：	compliant
Factory Lead Time：	13 weeks	风险等级：	5.69
Base Number Matches：	1

HV310 数据手册

HV300/HV310

Electrical Characteristics (V_IN=-10V to -90V, -40°C ≤ T_A≤ +85°C unless otherwise noted)

Symbol

Parameters

Min

Typ

Max

Unit

Conditions

Supply (Referenced to V_DDpin)

V_EE

I_EE

Supply Voltage

-90

-10

650

400

Supply Current

550

330

µA

V_EE= -48V, Mode = Limiting

V_EE= -48V, Mode = Standby

I_EE

Standby Mode Supply Current

OV and UV Control (Referenced to V_EEpin)

V_UVH

V_UVL

V_UVHY

I_UV

UV High Threshold

UV Low Threshold

UV Hysteresis

1.26

1.16

100

Low to High Transition

High to Low Transition

UV Input Current

OV High Threshold

OV Low Threshold

OV Hysteresis

1.0

V_UV= V_EE+ 1.9V

V_OVH

V_OVL

V_OVHY

I_OV

1.26

1.16

100

Low to High Transition

High to Low Transition

OV Input Current

1.0

V_OV= V_EE+ 0.5V

Current Limit (Referenced to V_EEpin)

V_SENSE

Current Limit Threshold Voltage

V_UV= V_EE+ 1.9V,

V_OV= V_EE+ 0.5V

Gate Drive Output (Referenced to V_EEpin)

V_GATE

Maximum Gate Drive Voltage

9.0

V_UV= V_EE+ 1.9V,

V_OV= V_EE+ 0.5V

I_GATEUP

Gate Drive Pull-Up Current

500

µA

V_UV= V_EE+ 1.9V,

V_OV= V_EE+ 0.5V,

I_GATEDOWN

Gate Drive Pull-Down Current

V_UV= V_EE, V_OV= V_EE+ 0.5V

Timing Control – Test Conditions: C =100µF, C_RAMP=10nF, V_UV= V_EE+1.9V, V_OV= V_EE+0.5V, External MOSFET is IRF530*

I_RAMP

t_POR

Ramp Pin Output Current

µA

µs

V_SENSE= 0V

(Note 1)

Time from UV to Gate Turn On

2.0

t_RISE

Time from Gate Turn On to V_SENSELimit

Duration of Current Limit Mode

400

t_LIMIT

5.0

0.8

t_PWRGD

V_RAMP

Time from Current Limit to PWRGD

Voltage on Ramp Pin in Current Limit Mode

5.0

3.6

(Note 2)

Power Good Output (Referenced to V_EEpin)

V_PWRGD

Power Good Pin Breakdown Voltage

Power Good Pin Output Low Voltage

0.5

I_PWRGD= 1mA

Dynamic Characterstics

t_GATEHLOV

t_GATEHLUV

OV Delay

UV Delay

500

Note 1: This timing depends on the threshold voltage of the external N-Channel MOSFET. The higher its threshold is, the longer this timing.

Note 2: This voltage depends on the characteristics of the external N-Channel MOSFET.

*IRF530 is a registered trademark of International Rectifier.

V_GS(th)= 3V for an IRF530.

123 4 5 6

中文翻译

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