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HUM2010C

更新时间： 2024-01-12 20:12:31

品牌	Logo	应用领域
美高森美 - MICROSEMI		PIN二极管开关测试高功率电源
页数	文件大小	规格书
4页	83K
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HUM2010C 数据手册

HUM2010/HUM2015/HUM2020

PIN DIODE HIGH POWER STUD

W AT E R T OW N D I V I S I O N

DESCRIPTION

KEY FEATURES

!"High Power Stud Mount

Package

!"High Zero Bias Impedance

!"Very Low Inductance and

Capacitance

!"No Internal Lead Straps

!"Small Mechanical Outline

With high isolation, low loss, and low distortion characteristics, this

Microsemi Power PIN diode is perfect for the high power switching

applications where size and power handling capability are critical.

Its advantages also include the low forward bias resistance and high

zero bias impedance that are essential for low loss, high isolation and wide

bandwidth performance.

Hermetically sealed, SOGO passivated PIN chips with full-faced

metallurgical bonds on both sides to achieve high reliability and high surge

capability.

APPLICATIONS/BENEFITS

•

MRI Applications

•

High Power Antenna Switching

IMPORTANT:

For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

Voltage Ratings [25°C]

ABSOLUTE MAXIMUM RATINGS

Reverse Voltage

Part type

Maximum Reverse Voltage

1000/1500/2000 V

13 W

(V_R) - Volts

Average Power Dissipation @ Stud = 50°C

I_R= 10µA

1000V

1500V

Non-Repetitive Sinusoidal Surge Current (8.3 ms)

Storage Temperature Range

100 A

65°C to +175°C

55°C to +150°C

7.5°C / W

HUM2010

HUM2015

HUM2020

2000V

Operating Temperature Range

Thermal Resistance

ELECTRICAL SPECIFICATIONS [25°C]

Test

Min

Typ

Max

Units

Conditions

Ω

Diode Resistance R_S

Capacitance C_T

F = 4 MHz, I =0.5 A

F = 1 MHz, 100 V

0.10

3.4

0.20

4.0

V_R@ Rated Voltage

µA

µs

Reverse Current I_R

I =10 mA / 100 V

F = 10 MHz, 100 V

Carrier Lifetime τ

Parallel Resistance R_P

KΩ

200

Forward Voltage V

I = 0.5 A

0.85

1.0

MSC0874.PDF 2000-08-23

Microsemi

Page 1

Watertown Division

580 Pleasant Street, Watertown, MA. 02172, 617-926-0404, Fax: 617-924-1235

12 3 4

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