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HUM2005SME3

更新时间: 2024-02-15 09:51:04
品牌 Logo 应用领域
美高森美 - MICROSEMI 开关二极管
页数 文件大小 规格书
5页 349K
描述
Pin Diode, Silicon, HERMETIC SEALED, MELF-2

HUM2005SME3 技术参数

生命周期:Active包装说明:O-LELF-R2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.68
其他特性:HIGH RELIABILITY应用:SWITCHING
外壳连接:ISOLATED配置:SINGLE
最大二极管电容:4 pF二极管元件材料:SILICON
最大二极管正向电阻:0.2 Ω二极管类型:PIN DIODE
JESD-30 代码:O-LELF-R2少数载流子标称寿命:30 µs
元件数量:1端子数量:2
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM表面贴装:YES
技术:POSITIVE-INTRINSIC-NEGATIVE端子形式:WRAP AROUND
端子位置:ENDBase Number Matches:1

HUM2005SME3 数据手册

 浏览型号HUM2005SME3的Datasheet PDF文件第2页浏览型号HUM2005SME3的Datasheet PDF文件第3页浏览型号HUM2005SME3的Datasheet PDF文件第4页浏览型号HUM2005SME3的Datasheet PDF文件第5页 
HUM2001/HUM2020 SERIES  
Pin Diode High Power Stud  
KEY FEATURES  
DESCRIPTION  
With high isolation, low loss, and low distortion characteristics, this  
Microsemi Power PIN diode is perfect for the high power switching  
applications where size and power handling capability are critical.  
Its advantages also include the low forward bias resistance and high zero  
bias impedance that are essential for low loss, high isolation and wide  
bandwidth performance.  
High Power Stud Mount Package.  
High Zero Bias Impedance  
Very Low Inductance and  
Capacitance.  
No Internal Lead Straps.  
Small Mechanical Outline.  
Hermetically sealed, SOGO passivated PIN chips with full-faced metallurgical  
bonds on both sides to achieve high reliability and high surge capability.  
APPLICATIONS/BENEFITS  
MRI Applications.  
High Power Antenna Switching.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
VOLTAGE RATING [25°C]  
Reverse  
Part type  
Voltage  
(VR) – Volts  
IR = 10µA  
100V  
HUM2001  
HUM2005  
HUM2010  
HUM2015  
HUM2020  
Style “D”  
Style “C”  
Stud  
Style “B”  
Style “SM”  
Melf  
500V  
Insulated Stud  
Round Axial Leads  
1000V  
1500V  
2000V  
Maximum Ratings @ 25ºC  
(UNLESS OTHERWISE SPECIFIED)  
TYPE  
Parameter  
S ymb o l  
HUM2001  
HUM2005  
HUM2010  
HUM2015  
HUM2020  
Unit  
Maximum Reverse  
Voltage  
TRWM  
100  
500  
1000  
1500  
2000  
V
Average Power  
Dissipation  
IO  
13  
13  
13  
13  
13  
W
A
@ Stud =50°C  
Non-Repetitive  
Sinusoidal Surge  
Current (8.3 ms)  
Storage  
I
100  
100  
100  
100  
100  
-65 to  
+175  
-65 to  
+175  
-65 to  
+175  
-65 to  
+175  
-65 to  
+175  
Temperature  
Range  
TSTG  
TSTG  
RθJC  
°C  
Operating  
-55 to  
+150  
-55 to  
+150  
-55 to  
+150  
-55 to  
+150  
-55 to  
+150  
Temperature  
Range  
°C  
Thermal resistance  
Junction-to Case  
“C” Stud only  
7.5  
7.5  
7.5  
7.5  
7.5  
°C/W  
Copyright 2000  
MSCXXXX.PDF 2002-08-08  
Microsemi  
Page 1  

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