Datasheet > HUM2005BE3

HUM2005BE3

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
5页	349K
描述
Pin Diode, Silicon, HERMETIC SEALED, AXIAL PACKAGE-2

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HUM2005BE3 数据手册

HUM2001/HUM2020 SERIES

Pin Diode High Power Stud

KEY FEATURES

DESCRIPTION

With high isolation, low loss, and low distortion characteristics, this

Microsemi Power PIN diode is perfect for the high power switching

applications where size and power handling capability are critical.

Its advantages also include the low forward bias resistance and high zero

bias impedance that are essential for low loss, high isolation and wide

bandwidth performance.

ꢀ High Power Stud Mount Package.

ꢀ High Zero Bias Impedance

ꢀ Very Low Inductance and

Capacitance.

ꢀ No Internal Lead Straps.

ꢀ Small Mechanical Outline.

Hermetically sealed, SOGO passivated PIN chips with full-faced metallurgical

bonds on both sides to achieve high reliability and high surge capability.

APPLICATIONS/BENEFITS

ꢀ

MRI Applications.

High Power Antenna Switching.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

VOLTAGE RATING [25°C]

Reverse

Part type

Voltage

(V_R) – Volts

I_R= 10µA

100V

HUM2001

HUM2005

HUM2010

HUM2015

HUM2020

Style “D”

Style “C”

Stud

Style “B”

Style “SM”

Melf

500V

Insulated Stud

Round Axial Leads

1000V

1500V

2000V

Maximum Ratings @ 25ºC

(UNLESS OTHERWISE SPECIFIED)

TYPE

Parameter

S ymb o l

HUM2001

HUM2005

HUM2010

HUM2015

HUM2020

Unit

Maximum Reverse

Voltage

T_RWM

100

500

1000

1500

2000

Average Power

Dissipation

I_O

@ Stud =50°C

Non-Repetitive

Sinusoidal Surge

Current (8.3 ms)

Storage

100

-65 to

+175

-65 to

+175

-65 to

+175

-65 to

+175

-65 to

+175

Temperature

Range

T_STG

R_θ_JC

°C

Operating

-55 to

+150

-55 to

+150

-55 to

+150

-55 to

+150

-55 to

+150

Temperature

Range

°C

Thermal resistance

Junction-to Case

“C” Stud only

7.5

°C/W

MSCXXXX.PDF 2002-08-08

Microsemi

Page 1

12 3 4 5

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