Datasheet > HTB100-P

HTB100-P

更新时间： 2024-01-17 05:16:53

品牌	Logo	应用领域
莱姆 - LEM		转换器传感器换能器
页数	文件大小	规格书
2页	66K
描述
Current Transducers HTB 50~400-P/SP5 and HTB 50~100-TP/SP5

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技术参数
数据手册

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HTB100-P 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	ROHS COMPLIANT PACKAGE	Reach Compliance Code：	compliant
风险等级：	5.74	其他特性：	IT ALSO REQUIRES MINUS 15 VOLT POWER SUPPLY AND PLUS/MINUS 12 VOLT
主体宽度：	11 mm	主体高度：	34 mm
主体长度或直径：	39 mm	安装特点：	THROUGH HOLE MOUNT
最高工作温度：	80 °C	最低工作温度：	-40 °C
输出范围：	-4-4V	输出类型：	ANALOG VOLTAGE
封装形状/形式：	RECTANGULAR	电阻：	100 Ω
传感器/换能器类型：	MAGNETIC FIELD SENSOR,HALL EFFECT	最大供电电压：	15.75 V
最小供电电压：	14.25 V	表面贴装：	NO
端接类型：	SOLDER	Base Number Matches：	1

HTB100-P 数据手册

Current Transducers HTB 50 .. 400-P/SP5

and HTB 50 .. 100-TP/SP5

I_PN= 50 .. 400 A

For the electronic measurement of currents: DC, AC, pulsed, mixed,

with a galvanic isolation between the primary circuit (high power) and

the secondary circuit (electronic circuit).

Electrical data

Primarynominal

r.m.s. current

I_PN(A)

Primary current

measuring range

I_P(A)

Type

±150

HTB 50-P/SP5, HTB 50-TP/SP5¹⁾

100

200

300

400

±300

±500

±600

HTB 100-P/SP5, HTB 100-TP/SP5¹⁾

HTB 200-P/SP5

HTB 300-P/SP5

HTB 400-P/SP5

Features

· Hall effect measuring principle

· Galvanic isolation between primary

and secondary circuit

· Isolationvoltage2500V

· Low power consumption

V_C

I_C

V_d

R_IS

V_OUT

R_OUT

R_L

Supplyvoltage(±5%)²⁾

Currentconsumption

R.m.s. voltage for AC isolation test, 50/60 Hz, 1 mn

Isolationresistance@500VDC

Output voltage @ ± I_PN, R_L= 10 kW, T_A= 25°C

Outputinternalresistance

+12 .. +15

<15

2.5

>500

V_OE±1.667

100

· Primary bus bar option for 50A and

100A version for ease of connection

Loadresistance

³ 10

SpecialFeatures

Accuracy - Dynamic performance data

· Single power supply from 12V to 15V

Accuracy @ I_PN, T_A= 25°C (without offset)

<±1

% of I_PN

Linearity (0 .. ± I_PN)

<±1

Vc/2±30

% of I_PN

V_O^L_E

V_OH

Electrical offset voltage, T_A= 25°C

Hysteresis offset voltage @ I_P= 0;

after an excursion of 3 x I_PN

Advantages

<±0.5 % of I_PN

· Small size and space saving

· Only one design for wide current

ratings range

· High immunity to external

interference.

V_OT

Thermal drift of V_OE

HTB 50-(T)P/SP5

HTB 100-(T)P..400-P/SP5 <±0.5

<±1.0

mV/K

%/K

TCe

Thermal drift (% of reading)

Response time @ 90% of I_P

Frequencybandwidth(-3dB)³⁾

<±0.05

DC .. 50 kHz

t_r

General data

Applications

T_A

T_S

Ambientoperatingtemperature

Ambientstoragetemperature

Mass (-TP version)

-25 .. +85

<30 (<36)

°C

· AC variable speed drives

· Static converters for DC motor drives

· Battery supplied applications

· Uninterruptible Power Supplies

(UPS)

· Switched Mode Power Supplies

(SMPS)

· Power supplies for welding

applications.

Notes : EN 50178 approval pending

¹⁾-TP version is equipped with a primary bus bar.

²⁾Operating at +12V £ Vc < +15V will reduce measuring range.

³⁾Derating is needed to avoid excessive core heating at high frequency.

030221/0

LEM Components

www.lem.com

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与HTB100-P相关器件

型号	品牌	描述	获取价格	数据表
HTB100-P/SP5	LEM	Current Transducers HTB 50~400-P/SP5 and HTB 50~100-TP/SP5	获取价格
HTB100-P_07	LEM	Current Transducers	获取价格
HTB100-SP5	LEM	Current Transducers	获取价格
HTB100-SP51	LEM	Current Transducers	获取价格
HTB100-TP	LEM	Current Transducers HTB 50~400-P and HTB 50~100-TP	获取价格
HTB100-TP/SP5	LEM	Current Transducers HTB 50~400-P/SP5 and HTB 50~100-TP/SP5	获取价格

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