Datasheet > HTB1A80

HTB1A80

更新时间： 2022-02-26 13:03:32

品牌	Logo	应用领域
SEMIHOW		三端双向交流开关
页数	文件大小	规格书
6页	423K
描述
4 Quadrants Sensitive TRIAC

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数据手册

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HTB1A80 数据手册

V_DRM= 600V/800V

I_T(RMS)= 1 A

I_TSM= 13 A

HTB1A60/HTB1A80

4 Quadrants Sensitive TRIAC

_GT= 5mA/12mA

Symbol

FEATURES

 Repetitive Peak Off-State Voltage : 600V/800V

 R.M.S On–State Current (I_T(RMS)= 1A)

 Sensitive Gate Trigger Current

- 5[mA] of IGT at I, II and III Quadrants.

- 12[mA] of IGT at IV Quadrant.

TO-92

Applications

AC power or phase control through low output current of MCU or IC

suck like Heater, Solenoid valve control, etc.

General Description

Semihow’s sensitive TRIAC product is a glass passivated device,

has a low gate trigger current, high stability in gate trigger current to

variation of operating temperature and high off state voltage. It is

generally suitable for power and phase control in ac application.

Absolute Maximum Ratings

(T_J=25℃ unless otherwise specified )

Ratings

Symbol

Parameter

Conditions

Unit

HTB1A60

600

HTB1A80

800

V_DRMRepetitive Peak Off-State Voltage

V_RRMRepetitive Peak Reverse Voltage

Sine wave, 50/60Hz, Gate open

Full sine wave, T_C= 72^oC

600

800

I_T(AV)

Average On-State Current

0.9

I_T(RMS)R.M.S. On-State Current

½ cycle, 50Hz/60Hz, Sine wave,

Non repetitive

I_TSM

I²t

Surge On-State Current

Fusing Current

12/13

0.7

A²S

t = 10ms

Forward Peak Gate Power

Dissipation

P_GM

T_J= 125 °C

Forward Average Gate Power

Dissipation

P_G(AV)

I_FGM

T_J= 125 °C, over any 20ms

0.2

Forward Peak Gate Current

T_J= 125 °C, pulse width ≤ 20us

0.5

V_RGMReverse Peak Gate Voltage

T_J

Operating Junction Temperature

Storage Temperature

-40~+125

-40~+150

^oC

T_STG

◎ SEMIHOW REV.A1,March 2013

12 3 4 5 6

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