Datasheet > HTB1-800

HTB1-800

更新时间： 2022-12-20 08:18:36

品牌	Logo	应用领域
SEMIHOW		/
页数	文件大小	规格书
4页	439K
描述
BI-DIRECTIONAL TRIODE THYRISTOR

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数据手册

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HTB1-800 数据手册

HTB1-800

BI-DIRECTIONAL TRIODE THYRISTOR

(TRIAC)

V_DRM= 800 V

I_T(RMS)= 1.0A

FEATURES

3.T2

Symbol

Repetitive Peak Off-State Voltage: 800V

R.M.S On-state Current (I_T(RMS)=1A)

High Commutation dv/dt

2.Gate

1.T1

TO-92

1. T1

2. Gate

3. T2

General Description

The TRIAC HTB1-800 is suitable for AC switching application, phase

control application such as heater control, motor control, lighting control,

and static switching relay.

Absolute Maximum Ratings

(

T =25℃)

Symbol

Parameter

Value

800

Units

DRM

Repetitive Peak Off-State Voltage

I_T(RMS)

I_TSM

R.M.SOn-State Current (Ta = 95 )

℃

Surge On-State Current

(One Cycle, 50/60Hz, Peak, Non Repetitive)

9.1/10

PeakGateVoltage

Peak Gate Current

0.5

I_GM

P_G(AV)

P_GM

Average Gate Power Dissipation

Peak Gate Power Dissipation

Storage Temperature Range

OperatingTemperature

0.1

T_STG

-40 to +125

℃

◎ SEMIHOW REV.1.0 Jan 2006

12 3 4

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