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HT16G PDF预览

HT16G

更新时间: 2024-11-22 22:48:31
品牌 Logo 应用领域
TSC 整流二极管高效整流二极管
页数 文件大小 规格书
2页 64K
描述
1.0 AMP. Glass Passivated High Efficient Rectifiers

HT16G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:GREEN, PLASTIC, TS-1, 2 PINReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.66Is Samacsys:N
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.7 V
JESD-30 代码:O-PALF-W2湿度敏感等级:1
最大非重复峰值正向电流:30 A元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.075 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:Pure Tin (Sn)端子形式:WIRE
端子位置:AXIALBase Number Matches:1

HT16G 数据手册

 浏览型号HT16G的Datasheet PDF文件第2页 
HT11G THRU HT18G  
1.0 AMP. Glass Passivated High Efficient Rectifiers  
Voltage Range  
50 to 1000 Volts  
Current  
1.0 Ampere  
TS-1  
Features  
Low forward voltage drop  
High current capability  
High reliability  
High surge current capability  
Mechanical Data  
Case: Molded plastic TS-1  
Epoxy: UL 94V-O rate flame retardant  
Lead: Axial leads, solderable per MIL-STD-  
202, Method 208 guaranteed  
Polarity: Color band denotes cathode end  
High temperature soldering guaranteed:  
260oC/10 seconds/.375”,(9.5mm) lead  
lengths at 5 lbs., (2.3kg) tension  
Mounting position: Any  
Weight: 0.20 gram  
Dimensions in inches and (millimeters)  
Maximum Ratings and Electrical Characteristics  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Symbol HT HT HT HT HT HT HT  
HT  
Type Number  
Units  
11G 12G 13G 14G 15G 16G 17G 18G  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
50 100 200 300 400 600 800 1000  
35 70 140 210 280 420 560 700  
50 100 200 300 400 600 800 1000  
V
V
V
VRRM  
VRMS  
VDC  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
Current .375 (9.5mm) Lead Length  
@TA = 55  
1.0  
30  
A
I(AV)  
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated  
Load (JEDEC method )  
A
V
IFSM  
VF  
Maximum Instantaneous Forward Voltage  
@ 1.0A  
Maximum DC Reverse Current  
@ TA=25at Rated DC Blocking Voltage  
@ TA=125℃  
1.0  
1.3  
5.0  
1.7  
uA  
uA  
IR  
150  
Maximum Reverse Recovery Time (Note 1)  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Trr  
Cj  
50  
15  
75  
10  
nS  
pF  
/W  
RθJA  
TJ  
95  
Operating Temperature Range  
Storage Temperature Range  
-65 to +150  
-65 to +150  
TSTG  
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.  
3. Mount on cu-Pad Size 5mm x 5mm on PCB.  
- 324 -  

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