Datasheet > HSM88ASR

HSM88ASR

更新时间： 2024-09-28 05:35:47

品牌	Logo	应用领域
科信 - KEXIN		肖特基二极管
页数	文件大小	规格书
1页	35K
描述
Silicon Schottky Barrier Diode

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中文翻译

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数据手册

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HSM88ASR 数据手册

SMD Type

Diodes

Silicon Schottky Barrier Diode

HSM88ASR

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Proof against high voltage.

MPAK package is suitable for high density surface mounting and high speed assembly.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

A bsolute M axim um R atings T a = 25

P aram eter

R everse voltage

S ym bol

V R

V alue

U nit

A verage rectified current

Junction tem perature

S torage tem perature

m A

T j

125

T stg

-55 to + 125

Electrical Characteristics Ta = 25

Parameter

Forward voltage

Symbol

Conditions

Min

350

500

Typ

Max

420

580

0.2

Unit

IF = 1 mA

IF = 10 mA

VR = 2 V

Reverse current

VR = 10 V

Capacitance

VR =0 V, f = 1 MHz

0.85

0.10

Capacitance deviation

Forward voltage deviation

ÄC

ÄVF

IF = 10 mA

C=200pF , Both forward and

reverse direction 1 pulse.

ESD-Capability (Note 1)

Note

1. Failure criterion ; IR

400nA at VR =2 V

Marking

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