是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.60 | 风险等级: | 5.65 |
配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | 最大二极管电容: | 0.85 pF |
二极管元件材料: | SILICON | 二极管类型: | MIXER DIODE |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e6 |
湿度敏感等级: | 1 | 元件数量: | 2 |
端子数量: | 3 | 最高工作温度: | 100 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
认证状态: | Not Qualified | 表面贴装: | YES |
技术: | SCHOTTKY | 端子面层: | TIN BISMUTH |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 20 | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HSM88ASTL | HITACHI |
获取价格 |
暂无描述 | |
HSM88ASTR | RENESAS |
获取价格 |
SILICON, MIXER DIODE | |
HSM88ASTR | HITACHI |
获取价格 |
Mixer Diode, Silicon | |
HSM88ASTR-E | RENESAS |
获取价格 |
SILICON, MIXER DIODE | |
HSM88WA | RENESAS |
获取价格 |
Silicon Schottky Barrier Diode for Detector and Mixer | |
HSM88WA | HITACHI |
获取价格 |
Silicon Schottky Barrier Diode for Balanced Mixer | |
HSM88WA | KEXIN |
获取价格 |
Silicon Schottky Barrier Diode | |
HSM88WA | TYSEMI |
获取价格 |
MPAK package is suitable for high density surface mounting and high speed assembly | |
HSM88WATL | RENESAS |
获取价格 |
SILICON, MIXER DIODE | |
HSM88WATR | HITACHI |
获取价格 |
Mixer Diode, Silicon |