Datasheet > HSC276

HSC276

更新时间： 2024-09-28 05:36:59

品牌	Logo	应用领域
科信 - KEXIN		肖特基二极管光电二极管
页数	文件大小	规格书
1页	32K
描述
Silicon Schottky Barrier Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HSC276 数据手册

SMD Type

Diodes

Silicon Schottky Barrier Diode

HSC276

SOD-523

Unit: mm

+0.1

1.2

-0.1

+0.1

0.6

-0.1

Features

High forward current, Low capacitance.

Ultra small Flat Package (UFP) is suitable for surface mount design.

+0.1

1.6

-0.1

0.77max

A b so lu te M a xim u m R a tin g s T a = 2 5

P a ra m e te r

R e ve rse V o lta g e

S ym b o l

V R

V a lu e

U n it

3 0

A ve ra g e re ctifie d cu rre n t

Ju n ctio n te m p e ra tu re

S to ra g e te m p e ra tu re

m A

T j

1 2 5

T stg

-5 5 to + 1 2 5

Electrical Characteristics Ta = 25

Parameter

Reverse voltage

Symbol

Conditions

IR = 10

Min

Typ

Max

Unit

Reverse current

Forward voltage

Capacitance

VR = 0.5 V

0.5

VR = 0.5 V, f = 1 MHz

C=200pF , Both forward and

reverse direction 1 pulse.

0.85

ESD-Capability (Note 1)

Note

1. Failure criterion ; IR

100mA at VR =0.5 V

Marking

www.kexin.com.cn

中文翻译

下载PDF

与HSC276相关器件

型号	品牌	获取价格	描述	数据表
HSC276_03	RENESAS	获取价格	HSC276_03
HSC276A	HITACHI	获取价格	Silicon Schottky Barrier Diode for Mixer
HSC276A	RENESAS	获取价格	Silicon Schottky Barrier Diode for Mixer
HSC276KRF	HITACHI	获取价格	暂无描述
HSC276KRU	HITACHI	获取价格	Mixer Diode, Silicon
HSC276KRV	HITACHI	获取价格	Mixer Diode, Silicon
HSC276KRV	RENESAS	获取价格	暂无描述
HSC276TRU	HITACHI	获取价格	Mixer Diode, Silicon
HSC276TRV	RENESAS	获取价格	SILICON, MIXER DIODE
HSC277	HITACHI	获取价格	Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch