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HS9-302EH-Q

更新时间： 2024-01-28 08:10:08
品牌 Logo 应用领域
英特矽尔 - INTERSIL 开关
页数 文件大小 规格书
3页 148K
描述
Radiation Hardened CMOS Dual DPST Analog Switch

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HS9-302EH-Q 技术参数

是否无铅： 含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：DFP
包装说明：DFP, FL14,.3针数：14
Reach Compliance Code：compliantHTS代码：8542.39.00.01
风险等级：5.5模拟集成电路 - 其他类型：DPST
JESD-30 代码：R-CDFP-F14JESD-609代码：e3
标称负供电电压 (Vsup)：-15 V正常位置：NO
信道数量：2功能数量：2
端子数量：14最大通态电阻 (Ron)：60 Ω
最高工作温度：125 °C最低工作温度：-55 °C
输出：SEPARATE OUTPUT封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装代码：DFP封装等效代码：FL14,.3
封装形状：RECTANGULAR封装形式：FLATPACK
峰值回流温度（摄氏度）：NOT APPLICABLE电源：+-15 V
认证状态：Not Qualified筛选级别：MIL-PRF-38535 Class T
座面最大高度：2.92 mm子类别：Multiplexer or Switches
标称供电电压 (Vsup)：15 V表面贴装：YES
最长接通时间：300 ns切换：BREAK-BEFORE-MAKE
技术：CMOS温度等级：MILITARY
端子面层：MATTE TIN端子形式：FLAT
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT APPLICABLE总剂量：100k Rad(Si) V
宽度：6.285 mmBase Number Matches：1

HS9-302EH-Q 数据手册

 浏览型号HS9-302EH-Q的Datasheet PDF文件第2页浏览型号HS9-302EH-Q的Datasheet PDF文件第3页 
Radiation Hardened CMOS Dual DPST Analog Switch  
HS-302RH, HS-302EH  
Features  
Intersil’s Satellite Applications Flow™ (SAF) devices are fully  
tested and guaranteed to 100kRAD Total Dose. These QML  
Class T devices are processed to a standard flow intended to  
meet the cost and shorter lead-time needs of large volume  
satellite manufacturers, while maintaining a high level of  
reliability.  
• QML Class T, Per MIL-PRF-38535  
• Radiation Performance  
5
- Gamma Dose (γ) 1 x 10 RAD(Si)  
• No Latch-Up, Dielectrically Isolated Device Islands  
• Pin for Pin Compatible with Intersil HI-302 Series Analog  
Switches  
The HS-302RH, HS-302EH analog switch is a monolithic device  
fabricated using Radiation Hardened CMOS technology and  
the Intersil dielectric isolation process for latch-up free  
operation. Improved total dose hardness is obtained by layout  
(thin oxide tabs extending to a channel stop) and processing  
(hardened gate oxide). These switches offer low-resistance  
switching performance for analog voltages up to the supply  
rails. “ON” resistance is low and stays reasonably constant  
over the full range of operating voltage and current. “ON”  
resistance also stays reasonably constant when exposed to  
radiation, being typically 30Ω pre-rad and 35Ω post  
100kRAD(Si). This device provide break-before-make  
switching.  
• Analog Signal Range 15V  
• Low Leakage. . . . . . . . . . . . . . . . . . . . .100nA (Max, Post Rad)  
• Low R  
ON  
. . . . . . . . . . . . . . . . . . . . . . . . . . 60Ω (Max, Post Rad)  
• Low Operating Power. . . . . . . . . . . . . .100µA (Max, Post Rad)  
Pin Configurations  
HS1-302RH, HS1-302EH  
(SBDIP), CDIP2-T14  
TOP VIEW  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
V+  
S4  
D4  
D2  
S2  
IN2  
V-  
NC  
S3  
Specifications  
Specifications for Rad Hard QML devices are controlled by the  
Defense Logistics Agency Land and Maritime (DLA). The SMD  
numbers listed below must be used when ordering.  
D3  
D1  
S1  
IN1  
GND  
Detailed Electrical Specifications for the HS-302RH, HS-302EH  
are contained in SMD# 5962-95812.  
8
Functional Diagram  
HS9-302RH, HS9-302EH  
(FLATPACK), CDFP3-F14  
TOP VIEW  
N
P
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
IN  
V+  
S4  
D4  
D2  
S2  
IN2  
V-  
NC  
S3  
D
D3  
D1  
S1  
TRUTH TABLE  
IN1  
GND  
LOGIC  
ALL SWITCHES  
8
0
1
OFF  
ON  
April 1, 2013  
FN4603.2  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2002, 2013. All Rights Reserved  
Intersil (and design) and Satellite Applications Flow™ (SAF) are trademarks owned by Intersil Corporation or one of its subsidiaries.  
All other trademarks mentioned are the property of their respective owners.  
123

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