Datasheet > HS4424DEH

HS4424DEH

更新时间： 2024-10-03 01:13:23

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
15页	528K
描述
Dual, Noninverting Power MOSFET Radiation Hardened Drivers

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HS4424DEH 数据手册

DATASHEET

Dual, Noninverting Power MOSFET Radiation Hardened

Drivers

HS-4424DRH, HS4424DEH

Features

The radiation hardened HS-4424 family are noninverting, dual,

monolithic high-speed MOSFET drivers designed to convert low

voltage control input signals into higher voltage, high current

outputs. The HS-4424DRH, HS-4424DEH are fully tested

across the 8V to 18V operating range.

• Electrically screened to DLA SMD# 5962-99560

• QML qualified per MIL-PRF-38535 requirements

• Latch-up immune

• Radiation environment

• High dose rate (50-300rad(Si)/s). . . . . . . . . . . . . 300krad(Si)

The inputs of these devices can be directly driven by the

HS-1825ARH PWM device or by our ACS/ACTS and HCS/HCTS

type logic devices. The fast rise times and high current outputs

allow very quick control of high gate capacitance power

MOSFETs in high frequency applications.

- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 50krad(Si)*

*Limit established by characterization

• I_PEAK. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2A (minimum)

• Matched rise and fall times (C_L= 4300pF). . 75ns (maximum)

The high current outputs minimize power losses in MOSFETs by

rapidly charging and discharging the gate capacitance. The

output stage incorporates a low voltage lockout circuit that

puts the outputs into a three-state mode when the supply

voltage is below its Undervoltage Lockout (UVLO) threshold

voltage.

• Low voltage lockout feature . . . . . . . . . . . . . . . . . . . . . . . . <8V

• Wide supply voltage range . . . . . . . . . . . . . . . . . . . . 8V to 18V

• Propagation delay . . . . . . . . . . . . . . . . . . . .250ns (maximum)

• Consistent delay times with V_CCchanges

• Low power consumption

- 40mW with inputs high

- 20mW with inputs low

Constructed with Intersil’s dielectrically isolated Rad Hard

Silicon Gate (RSG) BiCMOS process, these devices are immune

to single event latch-up and have been specifically designed to

provide highly reliable performance in harsh radiation

environments.

• Low equivalent input capacitance . . . . . . . . . . 3.2pF (typical)

• ESD protected. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >4kV

TABLE 1. HS4424 PRODUCT FAMILY SPECIFIC UVLO Vth

Applications

• Switching power supplies

• DC/DC converters

PART NUMBER

UVLO (V)

<10

HS-4424RH

HS-4424EH

• Motor controllers

HS4424BRH

HS4424BEH

<7.5

HS4424DRH

HS4424DEH

7.7

+8V TO +18V

VCC

UVLO_f

7.6

UVLO_r

7.5

OUT A

IN A

PWM

7.4

7.3

7.2

CONTROLLER

IN B

OUT B

HS-1825ARH

HS-4424D

GND

-55

125

TEMPERATURE (°C)

FIGURE 1. TYPICAL APPLICATION

FIGURE 2. UNDERVOLTAGE LOCKOUT vs TEMPERATURE

October 15, 2015

FN8747.2

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.

All other trademarks mentioned are the property of their respective owners.

12 3 4 5 6 7...15

中文翻译

下载PDF

与HS4424DEH相关器件

型号	品牌	获取价格	描述	数据表
HS-4424DEH	RENESAS	获取价格	Dual, Noninverting Power MOSFET Radiation Hardened Drivers
HS4424DRH	INTERSIL	获取价格	Dual, Noninverting Power MOSFET Radiation Hardened Drivers
HS-4424DRH	RENESAS	获取价格	Dual, Noninverting Power MOSFET Radiation Hardened Drivers
HS-4424EH	RENESAS	获取价格	HS-4424EH
HS-4424RH	INTERSIL	获取价格	Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers
HS-4424RH	RENESAS	获取价格	Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers
HS44300000J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
HS44300100J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
HS44302000J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
HS44302100J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block

与HS4424DEH相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

38
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

32
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

29
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

40

产品中心

服务支持

精选活动

关于我们

帮助中心

HS4424DEH

HS4424DEH 数据手册

与HS4424DEH相关器件

与HS4424DEH相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HS4424DEH

HS4424DEH 数据手册

与HS4424DEH相关器件

与HS4424DEH相关文章

您还可以找

您在本页遇到什么问题？