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HS-4424DRH PDF预览

HS-4424DRH

更新时间: 2024-10-03 14:57:19
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
18页 678K
描述
Dual, Noninverting Power MOSFET Radiation Hardened Drivers

HS-4424DRH 数据手册

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DATASHEET  
HS-4424DRH, HS-4424DEH  
Dual, Noninverting Power MOSFET Radiation Hardened Drivers  
FN8747  
Rev 3.00  
Jan 12, 2021  
The radiation hardened HS-4424 family are noninverting, dual,  
Features  
monolithic high-speed MOSFET drivers designed to convert low  
voltage control input signals into higher voltage, high current  
outputs. The HS-4424DRH, HS-4424DEH are fully tested  
across the 8V to 18V operating range.  
• Electrically screened to DLA SMD# 5962-99560  
• QML qualified per MIL-PRF-38535 requirements  
• Latch-up immune  
The inputs of these devices can be directly driven by the  
HS-1825ARH PWM device or by our ACS/ACTS and HCS/HCTS  
type logic devices. The fast rise times and high current outputs  
allow very quick control of high gate capacitance power  
MOSFETs in high frequency applications.  
• Radiation acceptance testing - HS-4424DRH  
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300krad(Si)  
• Radiation acceptance testing - HS-4424DEH  
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300krad(Si)  
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 50krad(Si)*  
*Limit established by characterization  
The high current outputs minimize power losses in MOSFETs by  
rapidly charging and discharging the gate capacitance. The  
output stage incorporates a low voltage lockout circuit that  
puts the outputs into a three-state mode when the supply  
voltage is below its Undervoltage Lockout (UVLO) threshold  
voltage.  
• IPEAK. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2A (minimum)  
• Matched rise and fall times (CL = 4300pF). . 75ns (maximum)  
• Low voltage lockout feature . . . . . . . . . . . . . . . . . . . . . . . . <8V  
• Wide supply voltage range . . . . . . . . . . . . . . . . . . . . 8V to 18V  
Constructed with a dielectrically isolated Rad Hard Silicon Gate  
(RSG) BiCMOS process, these devices are immune to single  
event latch-up and have been specifically designed to provide  
highly reliable performance in harsh radiation environments.  
• Propagation delay . . . . . . . . . . . . . . . . . . . .250ns (maximum)  
• Consistent delay times with VCC changes  
• Low power consumption  
- 40mW with inputs high  
- 20mW with inputs low  
TABLE 1. HS4424 PRODUCT FAMILY SPECIFIC UVLO Vth  
PART NUMBER  
UVLO (V)  
<10  
• Low equivalent input capacitance . . . . . . . . . . 3.2pF (typical)  
• ESD protected. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >4kV  
HS-4424RH  
HS-4424EH  
HS4424BRH  
HS4424BEH  
<7.5  
<8  
Applications  
• Switching power supplies  
• DC/DC converters  
HS4424DRH  
HS4424DEH  
• Motor controllers  
Related Literature  
For a full list of related documents, visit our website:  
HS-4424DRH, HS-4424DEH  
7.7  
+8V TO +18V  
VCC  
UVLO_f  
7.6  
UVLO_r  
7.5  
OUT A  
OUT B  
IN A  
IN B  
PWM  
CONTROLLER  
7.4  
7.3  
7.2  
HS-1825ARH  
HS-4424D  
GND  
-55  
25  
125  
TEMPERATURE (°C)  
FIGURE 1. TYPICAL APPLICATION  
FIGURE 2. UNDERVOLTAGE LOCKOUT vs TEMPERATURE  
FN8747 Rev 3.00  
Jan 12, 2021  
Page 1 of 17  

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